生命周期: | Active | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.13 |
最大集电极电流 (IC): | 0.6 A | 集电极-发射极最大电压: | 160 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5551-C-T92-R | UTC |
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HIGH VOLTAGE SWITCHING TRANSISTOR | |
2N5551CTA | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N5551CYTA | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2N5551DCSM | SEME-LAB |
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Dual Bipolar NPN Devices in a hermetically sealed | |
2N5551G | ONSEMI |
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Amplifier Transistors | |
2N5551G-A-T92-B | UTC |
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Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N5551G-A-T92-K | UTC |
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Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N5551G-x-251 | BWTECH |
获取价格 |
HIGH VOLTAGE SWITCHING TRANSISTOR | |
2N5551G-x-AB3-R | BWTECH |
获取价格 |
HIGH VOLTAGE SWITCHING TRANSISTOR | |
2N5551G-X-AB3-R | UTC |
获取价格 |
HIGH VOLTAGE SWITCHING TRANSISTOR |