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2N5551J18Z PDF预览

2N5551J18Z

更新时间: 2024-11-06 15:26:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
14页 511K
描述
600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN

2N5551J18Z 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.02
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:160 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3湿度敏感等级:NOT APPLICABLE
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N5551J18Z 数据手册

 浏览型号2N5551J18Z的Datasheet PDF文件第2页浏览型号2N5551J18Z的Datasheet PDF文件第3页浏览型号2N5551J18Z的Datasheet PDF文件第4页浏览型号2N5551J18Z的Datasheet PDF文件第5页浏览型号2N5551J18Z的Datasheet PDF文件第6页浏览型号2N5551J18Z的Datasheet PDF文件第7页 
MMBT5551  
2N5551  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 3S  
E
NPN General Purpose Amplifier  
This device is designed for general purpose high voltage amplifiers  
and gas discharge display drivers.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
160  
180  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
600  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5551  
*MMBT5551  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2001 Fairchild Semiconductor International  
2N5551/MMBT5551, Rev A  

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