5秒后页面跳转
2N490HR PDF预览

2N490HR

更新时间: 2024-11-29 05:20:27
品牌 Logo 应用领域
DIGITRON /
页数 文件大小 规格书
7页 677K
描述
Unijunction Transistor

2N490HR 数据手册

 浏览型号2N490HR的Datasheet PDF文件第2页浏览型号2N490HR的Datasheet PDF文件第3页浏览型号2N490HR的Datasheet PDF文件第4页浏览型号2N490HR的Datasheet PDF文件第5页浏览型号2N490HR的Datasheet PDF文件第6页浏览型号2N490HR的Datasheet PDF文件第7页 
2N489(A,B)-2N494(A,B)  
SILICON UNIJUNCTION TRANSISTORS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
Stable operation over wide temperature range  
Low leakage current  
Low peak point current  
Guaranteed minimum pulse voltage  
MAXIMUM RATINGS  
Rating  
Value  
450mW  
Total RMS Power Dissipation (Unstabilized)  
Total RMS Power Dissipation (Stabilized)  
RMS Emitter Current  
600mW  
70mA  
Peak Emitter Current (TJ = 150°C)  
Emitter Reverse Voltage (TJ = 150°C)  
Operating Temperature Range  
2 A  
60 V  
-65° to +140°C  
-65° to +175°C  
-65° to +175°C  
Operating Temperature Range (Stabilized)  
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Maximum  
Minimum  
Valley  
Intrinsic  
standoff  
ratio (1)  
Modulated  
interbase  
current  
Interbase  
Emitter  
saturation  
voltage  
Peak  
point  
current  
Emitter reverse  
current  
resistance (2)  
point  
current  
Base one  
peak  
TJ =  
150°C  
pulse  
RB2  
100Ω  
=
VB2E  
=
60V  
Part  
number  
IR = 50mA  
VBB = 10V  
IE = 50mA  
VBB = 10V  
VB2E  
=30V  
voltage (3)  
VBB = 3V  
VBB = 25V  
VB2E  
=
VRR = 10V  
VBB = 20V  
10V  
RBBO  
IB2(MOI)  
mA  
VE(SAT)  
Volts  
IEB2O  
µA  
IEB2O  
IEB2O  
µA  
IP  
IV  
VOB1  
ŋ
kΩ  
µA  
µA  
mA  
Volts  
Min  
Max  
.62  
.62  
.62  
.62  
.62  
.62  
.62  
.68  
.68  
.68  
.68  
.68  
.68  
Min  
4.7  
4.7  
4.7  
6.2  
6.2  
6.2  
6.2  
4.7  
4.7  
4.7  
6.2  
6.2  
6.2  
Max  
6.8  
6.8  
6.8  
9.1  
9.1  
9.1  
9.1  
6.8  
6.8  
6.8  
9.1  
9.1  
9.1  
Min  
6.8  
6.8  
6.8  
6.8  
6.8  
6.8  
6.8  
6.8  
6.8  
6.8  
6.8  
6.8  
6.8  
Max  
22  
22  
22  
22  
22  
22  
22  
22  
22  
22  
22  
22  
22  
2N489  
.51  
.51  
.51  
.51  
.51  
.51  
.51  
.56  
.56  
.56  
.56  
.56  
.56  
5
4
2
2
2
2
2
2
2
2
2
2
2
2
2
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
-
12  
12  
6
8
8
8
8
8
8
8
8
8
8
8
8
8
-
2N489A  
2N489B  
2N490  
-
3
3
-
4
0.2  
5
-
12  
12  
6
2N490A  
2N490B  
2N490C  
2N491  
4
-
0.2  
0.02  
-
3
3
3
-
4
4
2
5
12  
12  
6
2N491A  
2N491B  
2N492  
4.3  
4.3  
5
-
3
3
-
0.2  
-
12  
12  
6
2N492A  
2N492B  
4.3  
4.3  
-
3
3
0.2  
Rev. 20180710  

与2N490HR相关器件

型号 品牌 获取价格 描述 数据表
2N490-PBF DIGITRON

获取价格

Unijunction Transistor
2N491 NJSEMI

获取价格

Diode
2N491/D ETC

获取价格

Medium-Power Plastic PNP Silicon Transistors
2N4910 CENTRAL

获取价格

Power Transistors
2N4910 ISC

获取价格

isc Silicon NPN Power Transistor
2N4910 SAVANTIC

获取价格

Silicon NPN Power Transistors
2N4910 NJSEMI

获取价格

MEDIUM-POWER NPN SILICON TRANSISTORS
2N4910LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2
2N4910X SEME-LAB

获取价格

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE
2N4910X_03 SEME-LAB

获取价格

NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE