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2N4912X PDF预览

2N4912X

更新时间: 2024-11-27 22:35:51
品牌 Logo 应用领域
SEME-LAB 晶体晶体管
页数 文件大小 规格书
2页 18K
描述
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

2N4912X 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-66
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.03外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-66JESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

2N4912X 数据手册

 浏览型号2N4912X的Datasheet PDF文件第2页 
2N4910X  
2N4911X  
2N4912X  
MECHANICAL DATA  
Dimensions in mm (inches)  
NPN EPITAXIAL  
POWER TRANSISTOR  
IN TO66  
HERMETIC PACKAGE  
6.35 (0.250)  
8.64 (0.340)  
3.68  
(0.145) rad.  
3.61 (0.142)  
3.86 (0.145)  
max.  
rad.  
APPLICATIONS  
• SCREENING OPTIONS AVAILABE  
• TO66 PACKAGE  
1
2
1.27 (0.050)  
1.91 (0.750)  
4.83 (0.190)  
5.33 (0.210)  
9.14 (0.360)  
min.  
TO–66 Metal Package.  
PIN 1 = BASE  
PIN 2 = EMITTER CASE = COLLECTOR  
ABSOLUTE MAXIMUM RATINGS  
(T  
= 25°C unless otherwise stated)  
2N4910X 2N4911X 2N4912X  
case  
V
V
V
Collector – Base Breakdown Voltage  
Collector – Emitter Breakdown Voltage  
Emitter – Base Breakdown Voltage  
Continuous Collector Current  
Base Current  
40V  
40V  
60V  
60V  
80V  
80V  
(BR)CBO  
(BR)CEO  
(BR)EBO  
5V  
I
I
4A  
C
1A  
B
P
Total Power Dissipation  
25W  
D
T
T
Operating Case Temperature Range  
Storage Temperature Range  
Thermal Resistance , Junction To Case  
–65 to +200°C  
–65 to +200°C  
7.0°C/W  
C
stg  
R
JC  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 4/98  

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