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2N4918 PDF预览

2N4918

更新时间: 2024-11-27 22:35:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
8页 117K
描述
GENERAL.PURPOSE POWER TRANSISTORS

2N4918 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:SIP包装说明:PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:7.73
最大集电极电流 (IC):1 A集电极-发射极最大电压:40 V
配置:Single最小直流电流增益 (hFE):30
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
端子数量:3最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHz

2N4918 数据手册

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ON Semiconductor)  
2N4918  
thru  
Medium-Power Plastic PNP  
Silicon Transistors  
*
2N4920  
. . . designed for driver circuits, switching, and amplifier  
applications. These high–performance plastic devices feature:  
*ON Semiconductor Preferred Device  
3 AMPERE  
GENERAL–PURPOSE  
POWER TRANSISTORS  
40–80 VOLTS  
Low Saturation Voltage —  
V
= 0.6 Vdc (Max) @ I = 1.0 Amp  
CE(sat)  
Excellent Power Dissipation Due to Thermopad Construction —  
C
30 WATTS  
P
= 30 W @ T = 25_C  
D
C
Excellent Safe Operating Area  
Gain Specified to I = 1.0 Amp  
C
Complement to NPN 2N4921, 2N4922, 2N4923  
*MAXIMUM RATINGS  
Ratings  
Symbol 2N4918 2N4919 2N4920  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
STYLE 1:  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
40  
40  
60  
60  
80  
80  
CEO  
3
2
1
V
CB  
EB  
CASE 77–09  
TO–225AA TYPE  
V
5.0  
Collector Current — Continuous (1)  
I *  
C
1.0  
3.0  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation @ T = 25°C  
Derate above 25_C  
P
D
30  
0.24  
Watts  
W/_C  
C
Operating & Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
_C  
THERMAL CHARACTERISTICS (2)  
Characteristic  
Symbol  
Max  
4.16  
Unit  
Thermal Resistance, Junction to Case  
θ
_C/W  
JC  
*Indicates JEDEC Registered Data for 2N4918 Series.  
(1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements.  
C
The 3.0 Amp maximum value is based upon actual current–handling capability of the  
device (See Figure 5).  
(2) Recommend use of thermal compound for lowest thermal resistance.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 10  
2N4918/D  

2N4918 替代型号

型号 品牌 替代类型 描述 数据表
2N4918G ONSEMI

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