Datasheet > 2N4921G

2N4921G

更新时间： 2024-01-18 06:53:29

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	91K
描述
Medium−Power Plastic NPN Silicon Transistors

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2N4921G 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.75
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin/Lead (Sn/Pb)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2N4921G 数据手册

2N4921, 2N4922, 2N4923

2N4923 is a Preferred Device

Medium−Power Plastic

NPN Silicon Transistors

These high−performance plastic devices are designed for driver

circuits, switching, and amplifier applications.

Features

http://onsemi.com

• Low Saturation Voltage − V

= 0.6 Vdc (Max) @ I = 1.0 A

CE(sat)

1.0 AMPERE

• Excellent Power Dissipation Due to Thermopad Construction −

P = 30 W @ T = 25_C

GENERAL PURPOSE

POWER TRANSISTORS

40−80 VOLTS, 30 WATTS

• Excellent Safe Operating Area

• Gain Specified to I = 1.0 A

• Complement to PNP 2N4918, 2N4919, 2N4920

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N4921

2N4922

2N4923

Vdc

CEO

TO−225

CASE 77

STYLE 1

Collector−Emitter Voltage

Emitter Base Voltage

2N4921

2N4922

2N4923

Vdc

5.0

Vdc

Adc

MARKING DIAGRAM

Collector Current − Continuous (Note 1)

1.0

3.0

Base Current − Continuous

1.0

Adc

Total Power Dissipation @ T = 25_C

0.24

YWW

N492xG

Derate above 25_C

mW/_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS (Note 2)

= Year

Characteristic

Symbol

Max

Unit

= Work Week

Thermal Resistance, Junction−to−Case

4.16

_C/W

2N492x = Device Code

x = 1, 2, or 3

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

= Pb−Free Package

ORDERING INFORMATION

1. The 1.0 A maximum I value is based upon JEDEC current gain requirements.

Device

Package

Shipping

The 3.0 A maximum value is based upon actual current handling capability of

the device (see Figures 5 and 6).

2. Recommend use of thermal compound for lowest thermal resistance.

2N4921

TO−225

500 Units / Box

2N4921G

TO−225

(Pb−Free)

*Indicates JEDEC Registered Data.

2N4922

TO−225

500 Units / Box

2N4922G

TO−225

(Pb−Free)

2N4923

TO−225

500 Units / Box

2N4923G

TO−225

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 11

2N4921/D

12 3 4 5 6

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2N4921LEADFREE	CENTRAL	Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/	获取价格
2N4922	ONSEMI	1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS	获取价格
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