5秒后页面跳转
2N4921G PDF预览

2N4921G

更新时间: 2024-01-02 23:39:13
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 91K
描述
Medium−Power Plastic NPN Silicon Transistors

2N4921G 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.75
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Tin/Lead (Sn/Pb)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2N4921G 数据手册

 浏览型号2N4921G的Datasheet PDF文件第1页浏览型号2N4921G的Datasheet PDF文件第3页浏览型号2N4921G的Datasheet PDF文件第4页浏览型号2N4921G的Datasheet PDF文件第5页浏览型号2N4921G的Datasheet PDF文件第6页 
2N4921, 2N4922, 2N4923  
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Emitter Sustaining Voltage (Note 3)  
V
Vdc  
CEO(sus)  
(I = 0.1 Adc, I = 0)  
2N4921  
2N4922  
2N4923  
C
B
40  
60  
80  
Collector Cutoff Current  
(V = 20 Vdc, I = 0)  
I
mAdc  
mAdc  
CEO  
2N4921  
2N4922  
2N4923  
CE  
B
0.5  
0.5  
0.5  
(V = 30 Vdc, I = 0)  
CE  
B
(V = 40 Vdc, I = 0)  
CE  
B
Collector Cutoff Current  
I
CEX  
(V = Rated V  
(V = Rated V  
CE  
, V  
CEO  
, V  
CEO  
= 1.5 Vdc)  
= 1.5 Vdc, T = 125_C  
CE  
EB(off)  
EB(off)  
0.1  
0.5  
C
Collector Cutoff Current  
(V = Rated V , I = 0)  
I
I
mAdc  
mAdc  
CBO  
0.1  
1.0  
CB  
CB  
E
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
EBO  
EB  
C
ON CHARACTERISTICS  
DC Current Gain (Note 3)  
h
FE  
(I = 50 mAdc, V = 1.0 Vdc)  
C
CE  
40  
30  
10  
150  
(I = 500 mAdc, V = 1.0 Vdc)  
C
CE  
(I = 1.0 Adc, V = 1.0 Vdc)  
C
CE  
Collector−Emitter Saturation Voltage (Note 3)  
(I = 1.0 Adc, I = 0.1 Adc)  
V
V
Vdc  
Vdc  
Vdc  
CE(sat)  
0.6  
1.3  
1.3  
C
B
Base−Emitter Saturation Voltage (Note 3)  
(I = 1.0 Adc, I = 0.1 Adc)  
BE(sat)  
C
B
Base−Emitter On Voltage (Note 3)  
(I = 1.0 Adc, V = 1.0 Vdc)  
V
BE(on)  
C
CE  
SMALL−SIGNAL CHARACTERISTICS  
Current−Gain − Bandwidth Product  
f
MHz  
pF  
T
(I = 250 mAdc, V = 10 Vdc, f = 1.0 MHz)  
3.0  
100  
C
CE  
Output Capacitance  
C
ob  
(V = 10 Vdc, I = 0, f = 100 kHz)  
CB  
E
Small−Signal Current Gain  
(I = 250 mAdc, V = 10 Vdc, f = 1.0 kHz)  
h
fe  
25  
C
CE  
3. Pulse Test: PW 300 ms, Duty Cycle 2.0%.  
*Indicates JEDEC Registered Data.  
http://onsemi.com  
2
 

与2N4921G相关器件

型号 品牌 描述 获取价格 数据表
2N4921LEADFREE CENTRAL Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/

获取价格

2N4922 ONSEMI 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS

获取价格

2N4922 SAVANTIC Silicon NPN Power Transistors

获取价格

2N4922 ISC Silicon NPN Power Transistors

获取价格

2N4922 JMNIC Silicon NPN Power Transistors

获取价格

2N4922 NJSEMI MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS

获取价格