ON Semiconductort
2N4921
thru
Medium-Power Plastic NPN
Silicon Transistors
*
2N4923
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
*ON Semiconductor Preferred Device
1 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
• Low Saturation Voltage —
V
CE(sat)
= 0.6 Vdc (Max) @ I = 1.0 Amp
C
• Excellent Power Dissipation Due to Thermopad Construction —
P = 30 W @ T = 25_C
D
C
30 WATTS
• Excellent Safe Operating Area
• Gain Specified to I = 1.0 Amp
C
• Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGS
Rating
Symbol 2N4921 2N4922 2N4923
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
40
40
60
60
80
80
CEO
CASE 77–09
TO–225AA TYPE
V
CB
V
EB
5.0
Collector Current — Continuous (1)
I
C
1.0
3.0
Base Current — Continuous
I
B
1.0
Adc
Total Power Dissipation @ T = 25_C
P
30
0.24
Watts
W/_C
_C
C
D
Derate above 25_C
Operating & Storage Junction
Temperature Range
T , T
J
–65 to +150
stg
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
4.16
Unit
Thermal Resistance, Junction to Case
θ
_C/W
JC
(1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements.
C
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6)
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev. 9
2N4921/D