Datasheet > 2N4921/D

2N4921/D

更新时间： 2024-11-25 23:19:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	112K
描述
Medium-Power Plastic NPN Silicon Transistors

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2N4921/D 数据手册

ON Semiconductort

2N4921

thru

Medium-Power Plastic NPN

Silicon Transistors

2N4923

. . . designed for driver circuits, switching, and amplifier

applications. These high–performance plastic devices feature:

*ON Semiconductor Preferred Device

1 AMPERE

GENERAL–PURPOSE

POWER TRANSISTORS

40–80 VOLTS

• Low Saturation Voltage —

CE(sat)

= 0.6 Vdc (Max) @ I = 1.0 Amp

• Excellent Power Dissipation Due to Thermopad Construction —

P = 30 W @ T = 25_C

30 WATTS

• Excellent Safe Operating Area

• Gain Specified to I = 1.0 Amp

• Complement to PNP 2N4918, 2N4919, 2N4920

*MAXIMUM RATINGS

Rating

Symbol 2N4921 2N4922 2N4923

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CASE 77–09

TO–225AA TYPE

5.0

Collector Current — Continuous (1)

1.0

3.0

Base Current — Continuous

1.0

Adc

Total Power Dissipation @ T = 25_C

0.24

Watts

W/_C

Derate above 25_C

Operating & Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS (2)

Characteristic

Symbol

Max

4.16

Unit

Thermal Resistance, Junction to Case

_C/W

(1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements.

The 3.0 Amp maximum value is based upon actual current handling capability of the

device (see Figures 5 and 6)

(2) Recommend use of thermal compound for lowest thermal resistance.

*Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 9

2N4921/D

12 3 4 5 6 7 8

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