Datasheet > 2N4921/D

2N4921/D

更新时间： 2024-01-11 22:11:44

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	112K
描述
Medium-Power Plastic NPN Silicon Transistors

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技术参数
数据手册

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2N4921/D 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.75
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin/Lead (Sn/Pb)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2N4921/D 数据手册

2N4921 thru 2N4923

1000

700

1.0

= 1.0 V

500

= 0.1 A

0.25 A

0.5 A

1.0 A

0.8

0.6

0.4

0.2

300

200

T = 150°C

T = 25°C

100

25°C

-ā55°C

2.0 3.0 5.0

20 30 50 100 200 300 500 1000 2000

0.2 0.3 0.5

1.0 2.0 3.0 5.0

10 20 30 50

100 200

I , COLLECTOR CURRENT (mA)

I , BASE CURRENT (mA)

Figure 8. Current Gain

Figure 9. Collector Saturation Region

1.5

1.2

0.9

0.6

0.3

= 10 x I

= 30 V

CES

T = 25°C

= 2 x I

CES

≈ I

CES

@ I /I = 10

C B

BE(sat)

@ V = 2.0 V

VALUES

CES

OBTAINED FROM

FIGURE 12

@ I /I = 10

C B

CE(sat)

120

150

2.0 3.0 5.0

20 30 50

100 200 300 500 1000 2000

T , JUNCTION TEMPERATURE (°C)

I , COLLECTOR CURRENT (mA)

Figure 10. Effects of Base–Emitter Resistance

Figure 11. “On” Voltage

+ā2.5

@ĂV

+Ă 1.0ĂV

+ā2.0

+ā1.5

+ā1.0

+ā0.5

FEĂ

CEĂ

T = 150°C

*APPLIES FOR I /I ≤

C B

100°C

T = 100°C to 150°C

25°C

*θ FOR V

CE(sat)

-ā55°C to +100°C

-ā0.5

-ā1.0

-ā1.5

-ā2.0

-ā2.5

= I

CES

= 30 V

-1

FOR V

REVERSE

FORWARD

+ā0.2 +ā0.3

, BASE-EMITTER VOLTAGE (VOLTS)

-ā2

-ā0.2

-ā0.1

+ā0.1

+ā0.4

+ā0.5

2.03.0 5.0 10

20 30 50

100 200 300 500 1000 2000

I , COLLECTOR CURRENT (mA)

Figure 12. Collector Cut–Off Region

Figure 13. Temperature Coefficients

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