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2N4919 PDF预览

2N4919

更新时间: 2024-11-28 05:57:43
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无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
3页 119K
描述
Silicon PNP Power Transistors

2N4919 数据手册

 浏览型号2N4919的Datasheet PDF文件第2页浏览型号2N4919的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N4918 2N4919 2N4920  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type 2N4921/4922/4923  
·Excellent safe operating area  
·Low collector saturation voltage  
APPLICATIONS  
·For driver circuits ,switching ,and  
amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-40  
-60  
-80  
-40  
-60  
-80  
-5  
UNIT  
2N4918  
2N4919  
2N4920  
2N4918  
2N4919  
2N4920  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
-1  
Collector current-Peak  
Base current  
-3  
A
-1  
A
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
30  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
4.16  
/W  

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