Datasheet > 2N4918/D

2N4918/D

更新时间： 2024-11-27 23:19:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	119K
描述
Medium-Power Plastic PNP Silicon Transistors

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2N4918/D 数据手册

ON Semiconductort

2N4918

thru

Medium-Power Plastic PNP

Silicon Transistors

2N4920

. . . designed for driver circuits, switching, and amplifier

applications. These high–performance plastic devices feature:

*ON Semiconductor Preferred Device

3 AMPERE

GENERAL–PURPOSE

POWER TRANSISTORS

40–80 VOLTS

• Low Saturation Voltage —

CE(sat)

= 0.6 Vdc (Max) @ I = 1.0 Amp

• Excellent Power Dissipation Due to Thermopad Construction —

P = 30 W @ T = 25_C

30 WATTS

• Excellent Safe Operating Area

• Gain Specified to I = 1.0 Amp

• Complement to NPN 2N4921, 2N4922, 2N4923

*MAXIMUM RATINGS

Ratings

Symbol 2N4918 2N4919 2N4920

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CASE 77–09

TO–225AA TYPE

5.0

Collector Current — Continuous (1)

I *

1.0

3.0

Base Current

1.0

Adc

Total Power Dissipation @ T = 25°C

Watts

Derate above 25_C

0.24

W/_C

Operating & Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS (2)

Characteristic

Symbol

Max

4.16

Unit

Thermal Resistance, Junction to Case

_C/W

*Indicates JEDEC Registered Data for 2N4918 Series.

(1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements.

The 3.0 Amp maximum value is based upon actual current–handling capability of the

device (See Figure 5).

(2) Recommend use of thermal compound for lowest thermal resistance.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 9

2N4918/D

12 3 4 5 6 7 8

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