Datasheet > 2N4914

2N4914

更新时间： 2024-11-28 06:22:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	40K
描述
isc Silicon NPN Power Transistors

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2N4914 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

2N4913

DESCRIPTION

·Low Collector Saturation Voltage-

: V_CE(sat)= 1.5V(Max.)@ I_C= 5A

·DC Current Gain-

: h_FE= 25-100 @I_C= 2.5A

·Complement to Type 2N4904

APPLICATIONS

·Designed for general purpose use in power amplifier and

switching circuits.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation@T_C=25℃

Junction Temperature

I_B

P_C

87.5

200

-65~200

℃

T_J

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

2.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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