Datasheet > 2N4914_09

2N4914_09

更新时间： 2024-11-28 07:28:43

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描述
SILICON EPITAXIAL

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中文翻译

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数据手册

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2N4914_09 数据手册

SILICON EPITAXIAL

NPN TRANSISTOR

2N4914

•

Low Collector Saturation Voltage.

Hermetic TO3 Metal Package.

Designed For General Purpose, Switching

and Power Amplifier Applications

•

Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Base Current

60V

CBO

CEO

EBO

60V

1.0A

T = 25°C

Total Power Dissipation at

87.5W

Derate Above 25°C

0.5W/°C

-65 to +200°C

Junction Temperature Range

Storage Temperature Range

stg

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ. Max. Units

Thermal Resistance, Junction To Case

°C/W

θJC

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 8301

Issue 1

Page 1 of 3

Website: http://www.semelab-tt.com

12 3

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