5秒后页面跳转
2N491/D PDF预览

2N491/D

更新时间: 2024-02-16 18:48:50
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 117K
描述
Medium-Power Plastic PNP Silicon Transistors

2N491/D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.82峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED

2N491/D 数据手册

 浏览型号2N491/D的Datasheet PDF文件第2页浏览型号2N491/D的Datasheet PDF文件第3页浏览型号2N491/D的Datasheet PDF文件第4页浏览型号2N491/D的Datasheet PDF文件第5页浏览型号2N491/D的Datasheet PDF文件第6页浏览型号2N491/D的Datasheet PDF文件第7页 
ON Semiconductor)  
2N4918  
thru  
Medium-Power Plastic PNP  
Silicon Transistors  
*
2N4920  
. . . designed for driver circuits, switching, and amplifier  
applications. These high–performance plastic devices feature:  
*ON Semiconductor Preferred Device  
3 AMPERE  
GENERAL–PURPOSE  
POWER TRANSISTORS  
40–80 VOLTS  
Low Saturation Voltage —  
V
= 0.6 Vdc (Max) @ I = 1.0 Amp  
CE(sat)  
Excellent Power Dissipation Due to Thermopad Construction —  
C
30 WATTS  
P
= 30 W @ T = 25_C  
D
C
Excellent Safe Operating Area  
Gain Specified to I = 1.0 Amp  
C
Complement to NPN 2N4921, 2N4922, 2N4923  
*MAXIMUM RATINGS  
Ratings  
Symbol 2N4918 2N4919 2N4920  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
STYLE 1:  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
40  
40  
60  
60  
80  
80  
CEO  
3
2
1
V
CB  
EB  
CASE 77–09  
TO–225AA TYPE  
V
5.0  
Collector Current — Continuous (1)  
I *  
C
1.0  
3.0  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation @ T = 25°C  
Derate above 25_C  
P
D
30  
0.24  
Watts  
W/_C  
C
Operating & Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
_C  
THERMAL CHARACTERISTICS (2)  
Characteristic  
Symbol  
Max  
4.16  
Unit  
Thermal Resistance, Junction to Case  
θ
_C/W  
JC  
*Indicates JEDEC Registered Data for 2N4918 Series.  
(1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements.  
C
The 3.0 Amp maximum value is based upon actual current–handling capability of the  
device (See Figure 5).  
(2) Recommend use of thermal compound for lowest thermal resistance.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 10  
2N4918/D  

与2N491/D相关器件

型号 品牌 描述 获取价格 数据表
2N4910 CENTRAL Power Transistors

获取价格

2N4910 ISC isc Silicon NPN Power Transistor

获取价格

2N4910 SAVANTIC Silicon NPN Power Transistors

获取价格

2N4910 NJSEMI MEDIUM-POWER NPN SILICON TRANSISTORS

获取价格

2N4910LEADFREE CENTRAL Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2

获取价格

2N4910X SEME-LAB NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

获取价格