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2N4910 PDF预览

2N4910

更新时间: 2024-01-26 08:03:11
品牌 Logo 应用领域
SAVANTIC 晶体晶体管局域网
页数 文件大小 规格书
3页 116K
描述
Silicon NPN Power Transistors

2N4910 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETICALLY SEALED, CERAMIC, SMD1, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-276AB
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

2N4910 数据手册

 浏览型号2N4910的Datasheet PDF文件第2页浏览型号2N4910的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N4910 2N4911 2N4912  
DESCRIPTION  
·With TO-66 package  
·Low collector saturation voltage  
·Excellent safe operating area  
·2N4912 complement to type 2N4900  
APPLICATIONS  
·Designed for driver circuits,switching  
and amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
40  
UNIT  
2N4910  
2N4911  
2N4912  
2N4910  
2N4911  
2N4912  
VCBO  
Collector-base voltage  
Open emitter  
V
60  
80  
40  
VCEO  
Collector-emitter voltage  
Open base  
V
60  
80  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
A
W
1.0  
IB  
Base current  
1.0  
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
25  
150  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
7.0  
/W  

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