Datasheet > 2N4910

2N4910

更新时间： 2024-11-28 06:16:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	116K
描述
Silicon NPN Power Transistors

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2N4910 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N4910 2N4911 2N4912

DESCRIPTION

·With TO-66 package

·Low collector saturation voltage

·Excellent safe operating area

·2N4912 complement to type 2N4900

APPLICATIONS

·Designed for driver circuits,switching

and amplifier applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N4910

2N4911

2N4912

2N4910

2N4911

2N4912

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

ꢀ

1.0

I_B

Base current

1.0

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

7.0

ꢀ/W

12 3

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与2N4910相关器件

型号	品牌	获取价格	描述	数据表
2N4910LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2
2N4910X	SEME-LAB	获取价格	NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE
2N4910X_03	SEME-LAB	获取价格	NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE
2N4910XSMD	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
2N4910XSMD05	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed
2N4911	NJSEMI	获取价格	MEDIUM-POWER NPN SILICON TRANSISTORS
2N4911	CENTRAL	获取价格	Power Transistors
2N4911	ISC	获取价格	Silicon NPN Power Transistor
2N4911	ASI	获取价格	Transistor
2N4911LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2