Datasheet > 2N4912

2N4912

更新时间： 2024-11-28 06:24:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	57K
描述
Silicon NPN Power Transistor

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中文翻译

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数据手册

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2N4912 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2N4912

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 80V(Min)

·Low Collector Saturatioin Voltage-

: V_CE(sat)= 0.6V(Max.)@ I_C= 1A

·Wide Area of Safe Operation

·Complement to Type 2N4900

APPLICATIONS

·Designed for driver circuits, switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Collector Current-Peak

Collector Current-Continuous

I_CM

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

200

Storage Temperature Range

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

7.0 ℃/W

Thermal Resistance,Junction to Case

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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