生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
Is Samacsys: | N | 最大集电极电流 (IC): | 10 A |
配置: | Single | 最小直流电流增益 (hFE): | 20 |
最高工作温度: | 175 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 150 W | 子类别: | Other Transistors |
表面贴装: | NO | 标称过渡频率 (fT): | 4 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N4908 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N4908 | APITECH |
获取价格 |
Transistor | |
2N4908 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package | |
2N4908 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2N4908E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N4909 | APITECH |
获取价格 |
Transistor | |
2N4909 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2N4909 | ISC |
获取价格 |
isc Silicon PNP Power Transistors | |
2N4909 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package | |
2N4909 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, |