生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.6 |
最大集电极电流 (IC): | 10 A | 配置: | Single |
最小直流电流增益 (hFE): | 20 | 最高工作温度: | 175 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 150 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N4908E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N4909 | APITECH |
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Transistor | |
2N4909 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2N4909 | ISC |
获取价格 |
isc Silicon PNP Power Transistors | |
2N4909 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package | |
2N4909 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N4909E3 | MICROSEMI |
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Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N490A | NJSEMI |
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Diode | |
2N490AHR | DIGITRON |
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Unijunction Transistor | |
2N490B | NJSEMI |
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Diode |