Datasheet > 2N3716

2N3716

更新时间： 2024-09-28 22:49:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
6页	275K
描述
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS

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2N3716 数据手册

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by 2N3715/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for medium–speed switching and amplifier applications. These devices

feature:

•

Total Switching Time at 3 A typically 1.15 µs

Gain Ranges Specified at 1 A and 3 A

10 AMPERE

POWER TRANSISTORS

SILICON NPN

Low V

: typically 0.5 V at I = 5 A and I = 0.5 A

CE(sat)

C B

Excellent Safe Operating Areas

Complement to 2N3791–92

60–80 VOLTS

150 WATTS

CASE 1–07

TO–204AA

(TO–3)

MAXIMUM RATINGS

Rating

Symbol

2N3715

2N3716

Unit

Volts

Amps

Watts

C/W

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CEO

100

7.0

Base Current

4.0

Power Dissipation

Thermal Resistance

150

1.17

150

1.17

Operating Junction and Storage Temperature Range

T , T

–65 to +200

stg

160

140

120

100

125

150

175

200

, CASE TEMPERATURE (°C)

Figure 1. Power–Temperature Derating Curve

Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.

REV 7

3–12

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6

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2N3716 替代型号

型号	品牌	替代类型	描述	数据表
2N3714LEADFREE	CENTRAL	功能相似	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2

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