5秒后页面跳转
2N3720 PDF预览

2N3720

更新时间: 2024-02-12 15:58:54
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关
页数 文件大小 规格书
3页 59K
描述
Silicon PNP Power Transistors

2N3720 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-39
包装说明:TO-39, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.13集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzBase Number Matches:1

2N3720 数据手册

 浏览型号2N3720的Datasheet PDF文件第2页浏览型号2N3720的Datasheet PDF文件第3页 
7516 Central Industrial Drive  
Riviera Beach, Florida  
33404  
PHONE: (561) 842-0305  
FAX: (561) 845-7813  
2N3720  
APPLICATIONS:  
·
·
High-Speed Switching  
Medium-Current Switching  
·
High-Frequency Amplifiers  
FEATURES:  
·
·
·
·
Collector-Emitter Sustaining Voltage:  
Silicon PNP  
Power Transistors  
VCEO(SUS) = 60 Vdc (Min) - 2N3720  
DC Current Gain:  
hFE = 25-180 @ IC = 1.0 Adc  
Low Collector-Emitter Saturation Voltage:  
VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc  
High Current-Gain - Bandwidth Product:  
fT = 90 MHz (Typ)  
DESCRIPTION:  
These power transistors are produced by PPC's DOUBLE DIFFUSED  
PLANAR process. This technology produces high voltage devices with  
excellent switching speeds, frequency response, gain linearity, saturation  
voltages, high current gain, and safe operating areas. They are intended for  
use in Commercial, Industrial, and Military power switching, amplifier, and  
regulator applications.  
Ultrasonically bonded leads and controlled die mount techniques are utilized  
to further increase the SOA capability and inherent reliability of these  
devices. The temperature range to 200°C permits reliable operation in high  
ambients, and the hermetically sealed package insures maximum reliability  
and long life.  
TO-5  
ABSOLUTE MAXIMUM RATINGS:  
SYMBOL  
CHARACTERISTIC  
VALUE  
UNITS  
Vdc  
Collector-Emitter Voltage  
60  
V
*
CEO  
Collector-Base Voltage  
Emitter-Base Voltage  
Peak Collector Current  
Continuous Collector Current  
Base Current  
60  
Vdc  
V *  
CB  
4.0  
Vdc  
V *  
EB  
10  
Adc  
Adc  
Adc  
°C  
I *  
C
3.0  
I *  
C
0.5  
I *  
B
Storage Temperature  
-65 to 200  
-65 to 200  
6.0  
T
*
STG  
Operating Junction Temperature  
Total Device Dissipation  
T *  
P *  
D
°C  
J
Watts  
T
= 25°C  
C
34.3  
1.0  
Derate above 25°C  
Total Device Dissipation  
mW/°C  
Watts  
P *  
D
T
= 25°C  
A
Derate above 25°C  
Thermal Resistance  
Junction to Case  
5.71  
mW/°C  
q JC  
29  
175  
°C/W  
°C/W  
Junction to Ambient  
* Indicates JEDEC registered Data.  
MSC1027.PDF 02-24-99  

与2N3720相关器件

型号 品牌 获取价格 描述 数据表
2N3720LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin, TO-3
2N3721 NJSEMI

获取价格

SI NPN LO-PWR BJT
2N3721 CDIL

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92
2N3722 NJSEMI

获取价格

NPN SMALL SIGNAL HIGH VOLTAGE HIGH CURRENT SWIRCHES
2N3722 CENTRAL

获取价格

Small Signal Transistors
2N3722LEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PI
2N3723 ETC

获取价格

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
2N3724 SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
2N3724 CENTRAL

获取价格

NPN SILICON TRANSISTOR
2N3724 NJSEMI

获取价格

HIGH SPEED NPN SILICON PLANAR EPITAXIAL