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2SB968

更新时间: 2024-11-18 12:53:39
品牌 Logo 应用领域
TYSEMI 散热片
页数 文件大小 规格书
1页 62K
描述
Possible to solder the radiation fin directly to printed cicuit board.

2SB968 数据手册

  
Product specification  
2SB968  
TO-252  
Unit: mm  
6.50+0.15  
-0.15  
2.30+0.1  
-0.1  
Features  
5.30+0.2  
0.50+0.8  
-0.7  
-0.2  
Possible to solder the radiation fin directly to printed cicuit board.  
High collector-emitter voltage VCEO.  
Large collector power dissipation PC.  
0.127  
max  
0.80+0.1  
-0.1  
0.60+0.1  
2.3  
4.60+0.15  
-0.1  
1 Base  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-50  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
-40  
V
-5  
-1.5  
V
A
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
ICP  
-3  
A
PC  
10  
W
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
IC = -1 mA, IE = 0  
Min  
-50  
-40  
Typ  
Max  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Collector-base cutoff curent  
Collector cutoff curent  
Emitter-base cutoff current  
VCBO  
VCEO  
ICBO  
ICEO  
IEBO  
IC = -2 mA, IB = 0  
VCB = -20 V,IE = 0  
VCE = -10 V,IB = 0  
VEB = -5 V, IC = 0  
VCE = -5 V, IC = -1 A  
VCE = -5 V, IC = -1mA  
V
-1  
ìA  
ìA  
ìA  
-100  
-10  
80  
10  
220  
Forward current transfer ratio  
hFE  
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = -1.5 A, IB = -0.15 A  
VBE(sat) IC = -2 A, IB = -0.2 A  
-1  
V
V
-1.5  
fT  
VCE = -5 V, IC = -0.5 A , f = 200 MHz  
VCB = -20V , IE = 0 , f = 1.0MHz  
150  
45  
MHz  
pF  
Collector output capacitance  
Cob  
hFE Classification  
Rank  
hFE  
Q
R
80 160  
120 220  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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