Datasheet > 2SA812

2SA812

更新时间： 2024-11-12 07:07:59

品牌	Logo	应用领域
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描述
TRANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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2SA812 数据手册

2SA812

SOT-23

TRANSISTOR(PNP)

Unit : mm

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

Complementary to 2SC1623

High DC Current Gain: h_FE=200 TYP.(V_CE=-6V,I_C=-1mA)

High Voltage: V_ceo=-50V

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-60

Units

-50

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-100

200

℃

P_C

T_J

150

T_stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=-100μA, I_E=0

I_C= -1mA, I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-60

-50

-5

I_E= -100μA, I_C=0

V_CB=- 60 V, I_E=0

V_EB= -5V, I_C=0

-0.1

600

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=- 6V, I_C= -1mA

I_C=-100mA, I_B= -10mA

I_C=-1mA, V_CE=-6V

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-0.3

-0.68

-0.58

Transition frequency

_CE=-6V, I_C= -10mA

180

4.5

MHz

f_T

Collector output capacitance

C_ob

V_CB=-10V,I_E=0,f=1MHz

CLASSIFICATION OF h^FE

90-180

135-270

300-600

Rank

200-400

Range

Marking

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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