生命周期: | Contact Manufacturer | 包装说明: | CHIP CARRIER, S-CBCC-N3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.39 | Is Samacsys: | N |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 140 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 90 |
JESD-30 代码: | S-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N3635E3 | MICROSEMI | Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD |
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2N3635L | ONSEMI | TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
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2N3635L | MICROSEMI | PNP SILICON AMPLIFIER TRANSISTOR |
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2N3635LEADFREE | CENTRAL | Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, T |
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2N3635UB | MICROSEMI | RADIATION HARDENED |
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2N3636 | SEME-LAB | Bipolar PNP Device in a Hermetically sealed TO39 |
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