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1SS226(T5LTST,F)

更新时间: 2024-01-22 15:49:52
品牌 Logo 应用领域
东芝 - TOSHIBA 超快恢复二极管快速恢复二极管测试光电二极管
页数 文件大小 规格书
6页 102K
描述
Rectifier Diode

1SS226(T5LTST,F) 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.65应用:ULTRA FAST RECOVERY
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-G3最大非重复峰值正向电流:2 A
元件数量:2相数:1
端子数量:3最高工作温度:125 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.15 W参考标准:AEC-Q101
最大重复峰值反向电压:85 V最大反向电流:0.5 µA
最大反向恢复时间:0.004 µs反向测试电压:80 V
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

1SS226(T5LTST,F) 数据手册

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1SS226  
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2018-11-16  
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