Datasheet > 1SS181

1SS181

更新时间： 2024-10-30 06:21:35

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
2页	314K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

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数据手册

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1SS181 数据手册

1SS181

SILICON EPITAXIAL PLANAR DIODE

Features

• Small package

• Low forward voltage

• Fast reverse recovery time

• Small total capacitance

Marking Code: A1

SOT-23 Plastic Package

Applications

• Ultra high speed switching application

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Maximum Peak Reverse Voltage

Reverse Voltage

V_RM

V_R

I_O

Average Forward Current

Maximum Peak Forward Current

Surge Current (10 ms)

100

I_FM

I_FSM

P_tot

T_j

300

150

Power Dissipation

Junction Temperature

150

Storage Temperature Range

T_s

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

1.2

Unit

Forward Voltage

at I_F= 100 mA

Reverse Current

at V_R= 30 V

at V_R= 80 V

0.1

0.5

µA

I_R

Total Capacitance

at V_R= 0 , f = 1 MHz

C_T

t_rr

Reverse Recovery Time

at I_F= 10 mA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 10/10/2008

中文翻译

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