Datasheet > 1SS181(T5RMAA,F)

1SS181(T5RMAA,F)

更新时间： 2024-11-16 07:39:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	203K
描述
Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon

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数据手册

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1SS181(T5RMAA,F) 数据手册

1SS181

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS181

Unit: mm

Ultra High Speed Switching Application

z Small package

: SC-59

: V

z Low forward voltage

= 0.92V (Typ.)

F (3)

z Fast reverse recovery time: t = 1.6ns (Typ.)

z Small total capacitance

: C = 2.2pF (Typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

300 (*)

100 (*)

2 (*)

FSM

150

°C

Junction temperature

125

Storage temperature

−55 to 125

stg

JEDEC

TO-236MOD

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

JEITA

SC-59

1-3G1E

TOSHIBA

Weight: 0.012g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit rating. Total rating = Unit rating × 1.5.

Electrical Characteristics

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

0.61

0.74

0.92

―

F (1)

Forward voltage

= 10mA

= 100mAs

= 30V

F (2)

1.20

0.1

0.5

4.0

F (3)

―

R (1)

Reverse current

μA

= 80V

R (2)

Total capacitance

= 0, f = 1MHz

2.2

1.6

Reverse recovery time

= 10mA (Fig.1)

Marking

Start of commercial production

1982-06

2014-03-01

12 3

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