Datasheet > 1PS76SB10

1PS76SB10

更新时间： 2024-09-16 05:57:03

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	34K
描述
Schottky barrier diode

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中文翻译

获取价格

数据手册

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1PS76SB10 数据手册

SMD Type

Diodes

Schottky barrier diode

1PS76SB10

SOD-323

Unit: mm

+0.1

1.7

-0.1

+0.05

0.85

-0.05

Features

Low forward volatge

Guard ring protected

Very small plastic SMD package.

+0.1

2.6

-0.1

1.0max

0.475

0.375

Absolute Maximum Ratings Ta = 25

PARAMATER

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-reetitiive peak forward current

storage temperature

SYMBOL

CONDITIONS

MIN

MAX

UNIT

V^R

V^F

200

T^FRM

T^FSM

T^stg

300

1 s; ä 0.5

tp < 10 ms

600

-65

+150

125

junction temperature

operating ambient temperature

Tamb

+125

E le c tric a l C h a ra c te ris tic s T a = 2 5

P A R A M A T E R

S Y M B O L

C O N D IT IO N S

I^F= 0 .1 m A

M A X

2 4 0

3 2 0

4 0 0

5 0 0

8 0 0

U N IT

I^F= 1 m A

fo rw a rd v o la tg e

V ^F

m V

I^F= 1 0 m A

I^F= 3 0 m A

I^F= 1 0 0 m A

V R = 2 5 V ; n o te 1 ;

re v e rs e c u rre n t

I^R

d io d e c a p a c ita n c e

C ^d

f = 1 M H z ; V R = 1 V ;

1 0

p F

N o te

1 . P u ls e d te s t: tp = 3 0 0

s ; ä = 0 .0 2 .

Marking

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中文翻译

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