Datasheet > 1PS76SB10-Q

1PS76SB10-Q

更新时间： 2024-09-17 11:12:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	193K
描述
Schottky barrier diodeProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1PS76SB10-Q 数据手册

1PS76SB10-Q

Schottky barrier single diode

16 June 2021

Product data sheet

1. General description

Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a

very small SOD323 Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Low forward voltage

•

Low capacitance

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Ultra high-speed switching

Line termination

Voltage clamping

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

200

Unit

I_F

forward current

reverse voltage

forward voltage

V_R

V_F

I_F= 10 mA; t_p= 300 µs; δ = 0.02;

pulsed; T_amb= 25 °C

400

12 3 4 5 6 7...10

中文翻译

下载PDF

与1PS76SB10-Q相关器件

型号	品牌	获取价格	描述	数据表
1PS76SB10T/R	NXP	获取价格	DIODE 0.2 A, SILICON, SIGNAL DIODE, PLASTIC, SC-76, 2 PIN, Signal Diode
1PS76SB17	NXP	获取价格	4 V, 30 mA low Cd Schottky barrier diode
1PS76SB17	TYSEMI	获取价格	Low forward volatge Guard ring protected Very small plastic SMD package.
1PS76SB17	KEXIN	获取价格	Schottky barrier diode
1PS76SB17	NEXPERIA	获取价格	4 V, 30 mA low capacitance Schottky barrier diodeProduction
1PS76SB17/T1	NXP	获取价格	DIODE SCHOTTKY
1PS76SB17135	NXP	获取价格	SILICON, UHF BAND, MIXER DIODE
1PS76SB17T/R	PHILIPS	获取价格	Rectifier Diode, Schottky, 1 Element, 0.03A, 4V V(RRM),
1PS76SB21	KEXIN	获取价格	Schottky barrier Diodes
1PS76SB21	TYSEMI	获取价格	Ultra fast switching speed Low forward volatge Guard ring protected