Datasheet > 1PS76SB17

1PS76SB17

更新时间： 2024-11-07 11:14:03

品牌	Logo	应用领域
安世 - NEXPERIA		二极管
页数	文件大小	规格书
8页	182K
描述
4 V, 30 mA low capacitance Schottky barrier diodeProduction

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1PS76SB17 数据手册

1PS76SB17

4 V, 30 mA low capacitance Schottky barrier diode

27 December 2022

Product data sheet

1. General description

Planar low capacitance Schottky barrier diode encapsulated in a SOD323 (SC-76) very small

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Very low diode capacitance

•

Very low forward voltage

Very small SMD plastic package

AEC-Q101 qualified

3. Applications

•

Digital applications:

•

Ultra high-speed switching

Clamping circuits

•

RF applications:

•

Diode ring mixer

RF detector

RF voltage doubler

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F

forward current

reverse voltage

diode capacitance

V_R

C_d

V_R= 0 V; f = 1 MHz; T_amb= 25 °C

0.8

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode[1]

anode

Simplified outline

Graphic symbol

sym001

SOD323

[1] The marking bar indicates the cathode.

12 3 4 5 6 7 8

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