Datasheet > 1PS76SB70

1PS76SB70

更新时间： 2024-11-09 06:21:55

品牌	Logo	应用领域
科信 - KEXIN		二极管光电二极管
页数	文件大小	规格书
1页	35K
描述
Schottky barrier Diodes

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中文翻译

获取价格

数据手册

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1PS76SB70 数据手册

SMD Type

Diodes

Schottky barrier Diodes

1PS76SB70

SOD-323

Unit: mm

+0.1

1.7

-0.1

+0.05

0.85

-0.05

Features

Low forward volatge

Guard ring protected

Very small plastic SMD package

Low diode capacitance.

+0.1

2.6

-0.1

1.0max

0.475

0.375

Absolute Maximum Ratings Ta = 25

PARAMATER

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

storage temperature

SYMBOL

V^R

CONDITIONS

MIN

MAX

UNIT

I^F

I^FRM

I^FSM

T^stg

1 s; ä

0.5

tp < 10 ms

100

+150

150

+150

-65

junction temperature

operating ambient temperature

Tamb

Electrical Characteristics Ta = 25

PARAMATER

SYMBOL

CONDITIONS

I^F= 1 m A

MAX

410

750

UNIT

m V

continuous forward voltage

continuous reverse current

I^F= 10 m A

I^F= 40 m A

V^R= 50 V; note 1

V^R= 70 V; note 1

VR = 0 V; f = MHz

100

I^R

diode capacitance

C^d

therm al resistance from junction to am bient

Note:

R^thj-a

450

K/W

1.Pulse test: tp = 300

s; ä = 0.02.

Marking

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