Datasheet > 1PS76SB17

1PS76SB17

更新时间： 2024-11-18 12:53:35

品牌	Logo	应用领域
TYSEMI		二极管
页数	文件大小	规格书
1页	56K
描述
Low forward volatge Guard ring protected Very small plastic SMD package.

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1PS76SB17 数据手册

Product specification

1PS76SB17

SOD-323

Unit: mm

+0.1

-0.1

+0.05

0.85

-0.05

1.7

Features

Low forward volatge

Guard ring protected

+0.1

-0.1

2.6

1.0max

ESD > 500 V; Human body model

Very small plastic SMD package.

0.475

0.375

Absolute Maximum Ratings Ta = 25

PARAMATER

continuous reverse voltage

continuous forward current

storage temperature

SYMBOL

MIN

-65

MAX

UNIT

V^R

V^F

T^stg

T^j

+150

100

junction temperature

Electrical Characteristics Ta = 25

PARAMATER

SYMBOL

V^F

CONDITIONS

I^F= 0.1 mA

I^F= 1 mA

TYP

MAX

300

450

600

0.25

UNIT

forward volatge

360

470

0.15

0.8

I^F= 10 mA

V^R= 3 V;

reverse current

I^R

C^d

f = 1 MHz; V^R= 0 V;

f = 1 MHz; V^R= 0.5 V;

note 1

diode capacitance

0.65

thermal resistance from junction to ambient

Note

R^{th j-a}

450

K/W

1. Refer to SOD323 standard mounting conditions.

Marking

4008-318-123

1 of 1

http://www.twtysemi.com

sales@twtysemi.com

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