Datasheet > 1N6660E3

1N6660E3

更新时间： 2024-11-07 08:44:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	173K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN

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1N6660E3 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

DUAL SCHOTTKY POWER RECTIFIER

Qualified per MIL-PRF-19500/608

DEVICES

LEVELS

JAN

1N6660

1N6660R

1N6660CCT1 1N6660CAT1 1N6660DT1

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)(Per Diode)

30 Amp / 45 Volts

COMMON CATHODE

COMMON ANODE

SCHOTTKY RECTIFIER

Parameters / Test Conditions

Peak Repetitive Reverse Voltage

Symbol

V_RWM

V_RRM

V_R

Value

Unit

Working Peak Reverse Voltage

DC Blocking Voltage

Note 1

Average Forward Current, 25°C

I_o

Apk

Peak Surge Forward Current @ t_p= 8.3ms, half

sinewave, I_o= 0; V_RM= 0

I_FSM

300

TO-254

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Operating Junction Temperature

1.65

°C/W

°C

R_θjc

R_θja

T_j

-65°C to 150

Storage Temperature

T_stg

°C

Note:

• 1

• 2

• 3

1. Derate linearly @ 300mA/°C from T_j= T_c= +100°C to 150°C

1N6660 & 1N6660CCT1

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol Min. Max.

Unit

• 1

• 2

• 3

Forward Voltage

I_F= 5A, T_j= 25°C*

I_F= 15A, T_j= 25°C*

I_F= 30A, T_j= 25°C*

I_F= 15A, T_j= -55°C*

0.55

0.75

1.0

1N6660R & 1N6660CAT1

V_F

0.80

Reverse Current

V_R= 45V, T_j= 25°C

V_R= 45V, T_j= 125°C

I_R

1.0

• 1

• 2

• 3

Junction Capacitance

V_R= 5V

1N6660DT1

C_j

2000

f = 1MHz

* Pulse test: Pulse width 300 µsec, Duty cycle 2%

T4-LDS-0015 Rev. 2 (101670)

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