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1N6661 PDF预览

1N6661

更新时间： 2024-11-06 06:18:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管
页数 文件大小 规格书
2页 115K
描述
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS

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中文翻译

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1N6661 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：DO-35
包装说明：HERMETIC SEALED, GLASS, MELF-2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.70风险等级：5.35
Is Samacsys：N外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：DO-35
JESD-30 代码：O-LALF-W2JESD-609代码：e0
元件数量：1端子数量：2
最大输出电流：0.5 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N6661 数据手册

 浏览型号1N6661的Datasheet PDF文件第2页 
1N6661 thru 1N6663  
VOIDLESS-HERMETICALLY-SEALED  
STANDARD RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “standard recovery” rectifier diode is military qualified to MIL-PRF-19500/587 and  
is ideal for high-reliability applications where a failure cannot be tolerated. These  
industry-recognized 500 mA rated rectifiers for working peak reverse voltages from 225  
to 600 volts are hermetically sealed with void-less-glass construction using an internal  
“Category I” metallurgical bond. The surface mount MELF package configurations are  
also available by adding a “US” suffix (see separate data sheet for 1N6661US thru  
1N6663US). Microsemi also offers numerous other rectifier products to meet higher  
and lower current ratings with various recovery time speed requirements including fast  
and ultrafast device types in both through-hole and surface mount packages.  
DO-35  
(Package C)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N6661 thru 1N6663 series  
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Standard recovery 0.5 Amp rectifiers 225 to 600 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
Forward surge current capability  
Extremely robust construction  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 225 to 600 Volts.  
•
•
•
JAN, JANTX, and JANTXV available per MIL-PRF-  
19500/587  
Low thermal resistance in small DO-35 package  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
•
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (also see  
1N6661US thru 1N6663US)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Junction & Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed void-less hard glass  
with Tungsten slugs  
Thermal Resistance: 160oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
TERMINATIONS: Axial leads are copper clad steel  
with Tin/Lead (Sn/Pb) finish  
•
Average Rectified Forward Current (IO): 0.5 Amps @  
TA = 25ºC and 0.150 Amps at 150ºC  
•
•
•
•
•
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
•
•
Forward Surge Current: 5 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 150 mg (approx)  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
PEAK  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
(NOTE 2)  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
SURGE  
CURRENT  
(NOTE1)  
MAXIMUM REVERSE  
CURRENT  
REVERSE  
VOLTAGE  
TYPE  
V
@ 0.4 A  
F
V
V
@ 100μA  
VOLTS  
I
I
@ V  
μA  
I
(PULSED)  
VOLTS  
RWM  
BR  
O
R
RWM  
FSM  
VOLTS  
AMPS  
AMPS  
25oC  
150oC  
0.15  
0.15  
0.15  
25oC  
150oC  
300  
300  
300  
1N6661  
1N6662  
1N6663  
225  
400  
600  
270  
480  
720  
0.5  
0.5  
0.5  
1.0  
1.0  
1.0  
0.05  
0.05  
0.05  
5
5
5
NOTE 1: TA = 25oC, 10 surges of 8.3 ms @ 1 minute intervals  
NOTE 2: Linearly derate at 2.8 mA/ºC between TA=25ºC and 150ºC and 6.0 mA/ºC between TA=150ºC and 175ºC  
Copyright © 2008  
1-03-2008  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

中文翻译

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