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1N6661US

更新时间： 2024-11-06 06:18:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管
页数 文件大小 规格书
2页 118K
描述
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS

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中文翻译

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1N6661US 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：HERMETIC SEALED, GLASS, D-5A, 2 PIN
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.70
风险等级：5.36Is Samacsys：N
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LELF-R2JESD-609代码：e0
元件数量：1端子数量：2
最大输出电流：0.5 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N6661US 数据手册

 浏览型号1N6661US的Datasheet PDF文件第2页 
1N6661US thru 1N6663US  
VOIDLESS-HERMETICALLY-SEALED  
STANDARD RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These “standard recovery” rectifier diodes are military qualified to MIL-PRF-19500/587  
and is ideal for high-reliability applications where a failure cannot be tolerated. They  
have a 500 mA rating with working peak reverse voltages from 225 to 600 volts and  
are hermetically sealed with void-less-glass construction using an internal “Category I”  
metallurgical bond. The axial-leaded package configurations are also available by  
deleting the “US” suffix (see separate data sheet for 1N6661 to 1N6663). Microsemi  
also offers numerous other rectifier products to meet higher and lower current ratings  
with various recovery time speed requirements including Fast and Ultrafast device  
types in both through-hole and surface mount packages.  
Package “A”  
or D-5A  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N6661 thru 1N6663 series  
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Standard recovery 0.5 Amp rectifiers 225 to 600 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
Forward surge current capability  
Extremely robust construction  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 225 to 600 Volts.  
•
•
•
JAN, JANTX, and JANTXV available per MIL-PRF-  
19500/587  
Low thermal resistance in small MELF package  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
•
Axial-leaded equivalents also available without the  
“US” suffix (see 1N6661 thru 1N6663)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Junction & Storage Temperature: -65oC to +175oC  
Thermal Resistance: 35oC/W junction to end cap  
•
•
CASE: Hermetically sealed void-less hard glass  
with Tungsten slugs  
TERMINATIONS: End caps are copper with  
Tin/Lead (Sn/Pb) finish  
Average Rectified Forward Current (IO): 0.5 Amps @  
TEC = 110ºC and 0.150 Amps at TEC = 150ºC  
•
•
•
•
•
MARKING: Body paint  
•
•
Forward Surge Current: 5 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
POLARITY: Cathode band  
TAPE & REEL option: Standard per EIA-481-B  
WEIGHT: 84 mg (approx)  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
PEAK  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
(NOTE 2)  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
SURGE  
CURRENT  
(NOTE 1)  
MAXIMUM REVERSE  
CURRENT  
REVERSE  
VOLTAGE  
TYPE  
V
@ 0.4 A  
F
V
V
@ 100μA  
VOLTS  
I
I
@ V  
μA  
I
(PULSED)  
VOLTS  
RWM  
BR  
O
R
RWM  
FSM  
VOLTS  
AMPS  
AMPS  
25oC  
150oC  
0.15  
0.15  
0.15  
25oC  
150oC  
300  
300  
300  
1N6661US  
1N6662US  
1N6663US  
225  
400  
600  
270  
480  
720  
0.5  
0.5  
0.5  
1.0  
1.0  
1.0  
0.05  
0.05  
0.05  
5
5
5
NOTE 1: TA = 25oC, 10 surges of 8.3 ms @ 1 minute intervals  
NOTE 2: Linearly derate at 8.75 mA/ºC between TEC = 110ºC to 150ºC and 6.0 mA/ºC between TEC = 150ºC to 175ºC  
Copyright © 2008  
1-03-2008  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

中文翻译

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1N6661US 替代型号

型号 品牌 替代类型 描述 数据表
JANTX1N6661US MICROSEMI

类似代替

 Rectifier Diode, 1 Element, 0.5A, Silicon, DO-35,

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