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1N6672_09

更新时间: 2024-09-15 07:23:11
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美高森美 - MICROSEMI /
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1页 93K
描述
DUAL ULTRAFAST POWER RECTIFIER

1N6672_09 数据手册

  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
DUAL ULTRAFAST POWER RECTIFIER  
Qualified per MIL-PRF-19500/617  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTXV  
1N6672  
1N6673  
1N6674  
1N6672R  
1N6673R  
1N6674R  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
1N6672, R  
1N6673, R  
1N6674, R  
300  
400  
500  
Peak Repetitive Reverse Voltage  
VRWM  
Vdc  
Average Forward Current (1)  
Peak Surge Forward Current  
TC = +100°C  
IF  
15  
150  
2.0  
Adc  
IFSM  
Rθjc  
A(pk)  
°C/W  
TO-254  
Thermal Resistance - Junction to Case  
Note:  
(1) Derate @ 150mA/°C above TC = 100°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
1N6672, R  
1N6673, R  
1N6674, R  
300  
400  
500  
Breakdown Voltage (2)  
IR = 500µAdc  
1  
2  
3  
VBR  
Vdc  
1N6672, 1N6673, 1N6674  
Forward Voltage (2)  
IF = 10A (pk)  
IF = 20A (pk)  
VF1  
VF2  
1.35  
1.55  
Vdc  
Reverse Leakage Current (2)  
VR = 240V  
VR = 320V  
1N6672, R  
1N6673, R  
1N6674, R  
IR1  
50  
5
µAdc  
VR = 400V  
1  
2  
3  
Reverse Leakage Current (2)  
VR = 240V, TC = +100°C  
VR = 320V, TC = +100°C  
VR = 400V, TC = +100°C  
1N6672R, 1N6673R, 1N6674R  
1N6672, R  
1N6673, R  
1N6674, R  
IR2  
mAdc  
Reverse Recovery Time  
IF = 0.5A, IR = 1A, IRR = 0.25A  
trr  
35  
nS  
pF  
Junction Capacitance  
VR = 10Vdc, f = 1.0MHz,  
CJ  
150  
Vsig = 50mV (p-p) (max)  
Note:  
(2) Pulse Test; 300µS, duty cycle 2%  
T4-LDS-0020 Rev. 1 (072046)  
Page 1 of 1  

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