Datasheet > 1N6663

1N6663

更新时间： 2024-09-15 20:42:31

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
2页	310K
描述
Rectifier Diode

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中文翻译

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技术参数
数据手册

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1N6663 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.71	Base Number Matches：	1

1N6663 数据手册

1N6661-1N6663

STANDARD RECOVERY RECTFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Characteristics

Ratings

Junction and Storage Temperature Range

Thermal Resistance

-65° to +175°C

160°C/W junction to lead at 3/8” lead length from body

0.5 Amps @ T_A= 25°C and 0.150 Amps at 150°C

5 Amps @ 8.3 half sine

Average Rectified Forward Current (I_O)

Forward Surge Current

Solder Temperatures

260°C for 10 s (maximum)

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Working Peak

Reverse

Minimum

Breakdown

Voltage

Average

Rectified

Current ⁽²⁾

Maximum

Forward

Voltage

Maximum

Reverse Current

Surge Current

(1)

Voltage

Part

I_O

Amps

I_R@ V_RWM

µA

V_F@ 0.4 A

(pulsed)

Volts

Number

V_RWM

Volts

V_BR@ 100µA

Volts

I_FSM

Amps

25°C

150°C

0.15

25°C

0.05

150°C

300

1N6661

225

400

600

270

480

720

0.5

1.0

1N6662

1N6663

300

Note 1: T_A= 25°C, 10 surges of 8.3ms @ 1 minute intervals

Note 2: Linearly derate at 2.8 mA/°C between T_A= 25°C and 150°C and 6.0 mA/°C between T_A= 150°C and 175°C.

Rev. 20190820

中文翻译

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1N6666R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 6A, Silicon, HERMETIC SEALED, ISOLATED TO-257, 3 PIN
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