是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-254AA |
包装说明: | S-XSFM-P3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.66 |
应用: | POWER | 外壳连接: | ISOLATED |
配置: | COMMON CATHODE, 2 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-XSFM-P3 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 300 A | 元件数量: | 2 |
相数: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
最大输出电流: | 15 A | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 45 V | 表面贴装: | NO |
技术: | SCHOTTKY | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6660CCT1E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, | |
1N6660D | SSDI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 45V V(RRM), Silicon, TO-254AA, HERMETI | |
1N6660DR | SSDI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 45V V(RRM), Silicon, TO-254AA, HERMETI | |
1N6660DRTX | SSDI |
获取价格 |
Rectifier Diode, Schottky, 40A, 45V V(RRM), | |
1N6660DT1 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, | |
1N6660E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, | |
1N6660R | SSDI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 45V V(RRM), Silicon, TO-254AA, HERMETI | |
1N6660R | MICROSEMI |
获取价格 |
30 Amp / 45 VOLTS COMMON CATHODE OR COMMON ANODE SCHOTTKY RECTIFIER | |
1N6660RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, | |
1N6660RT1 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, |