Datasheet > 1N6629HR

1N6629HR

更新时间： 2024-11-02 10:41:03

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
3页	2073K
描述
Rectifier Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N6629HR 数据手册

1N6626-1N6631

ULTRA FAST RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Value

Junction temperature

Storage temperature

-65° to 150°C

-65° to 175°C

Peak forward surge current @ 25°C ⁽¹⁾

1N6626-1N6630

75A

60A

1N6631

Average rectified forward current @ T_L= 75°C⁽²⁾

1N6626-1N6628

2.3A

1.8A

1N6629-1N6631

Average rectified forward current at T_A= 25°C⁽³⁾

1N6626-1N6628

1.75A

1.40A

1N6629-1N6631

Thermal resistance L = 0.375”

Capacitance at V_R= 10V

Solder temperature

22°C/W

40pF

260°C for 10 s maximum

Note 1: Test pulse = 8.3 ms, half-sine wave.

Note 2: Derate linearly at 1.0%/°C for T_L> 75°.

Note 3: Derate linearly at 0.80%/°C for T_A> 25°C. This is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T_J(max)is not exceeded.

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Maximum

reverse

recovery

time

Maximum

reverse

recovery

time

Working

peak

reverse

voltage

Maximum

forward

Recovery

Voltage

Minimum

breakdown

voltage

Peak

Recovery

Current ⁽²⁾

Maximum reverse

current

Max forward voltage

(low

(high

current) ⁽¹⁾

current)⁽²⁾

Part

number

I_{RM (rec)}

V_FRM

V_R

I_{R @}V_RWM

V_RWM

t_rr

I_F= 0.5A

I_F= 2A

100A/μS

I_R= 50μA

V_F@ I_F

T_A=25°C

μA

T_A=150°C

μA

t_r= 12ns

V@A

1N6626

1N6627

1N6628

1N6629

1N6630

1N6631

200

400

600

800

900

1000

220

1.35V@2.0A

1.40V@1.4A

1.60V@1.4A

1.50V@4.0A

1.70V@3.0A

1.95V@2.0A

2.0

500

3.5

4.2

5.0

440

2.0

500

660

2.0

500

880

2.0

500

990

2.0

500

1100

4.0

600

Note 1: Low Current Reverse Recovery Time Test Conditions I_F= 0.5A, I_RM= 1.0A, I_R(REC)= 0.25A.

Note 2: High Current Reverse Recovery Time Test Conditions I_F= 2.0A, 100A/µs, MIL-STD-750, METHOD 4031, CONDITION D.

Rev. 20131216

12 3

中文翻译

下载PDF

与1N6629HR相关器件

型号	品牌	获取价格	描述	数据表
1N6629-PBF	DIGITRON	获取价格	Rectifier Diode
1N6629S	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,
1N6629SMS	SSDI	获取价格	1.8 A, 800 V Hyperfast Recovery Rectifier
1N6629SMSTX	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.8A, 800V V(RRM), Silicon,
1N6629TXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.8A, 800V V(RRM), Silicon,
1N6629U	SENSITRON	获取价格	Ultrafast Recovery Rectifier
1N6629US	MICROSEMI	获取价格	ULTRA FAST RECTIFIERS
1N6629US	SENSITRON	获取价格	Ultrafast Recovery Rectifier
1N6629USS	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,
1N6629USV	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,