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1N6630SMSTXV PDF预览

1N6630SMSTXV

更新时间: 2024-11-01 21:01:31
品牌 Logo 应用领域
SSDI 功效二极管
页数 文件大小 规格书
2页 71K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.8A, 900V V(RRM), Silicon,

1N6630SMSTXV 技术参数

生命周期:Active包装说明:E-LELF-R2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.63
Is Samacsys:N应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJESD-30 代码:E-LELF-R2
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:1.8 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM参考标准:MIL-19500
最大重复峰值反向电压:900 V最大反向电流:2 µA
最大反向恢复时间:0.05 µs表面贴装:YES
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

1N6630SMSTXV 数据手册

 浏览型号1N6630SMSTXV的Datasheet PDF文件第2页 
1N6626 – 1N6631  
Solid State Devices, Inc.  
Series  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
2.3 – 1.8 AMP  
HYPER FAST RECOVERY  
RECTIFIER  
Designer’s Data Sheet  
Part Number/Ordering Information1/  
1N __ __ __  
200 - 1200 VOLTS  
2/  
Screening  
30 - 60 nsec  
__ = Not screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
FEATURES:  
Hyper Fast Recovery: 30 - 60 nsec maximum  
PIV up to 1200 Volts  
Low Reverse Leakage Current  
Hermetically Sealed  
Void Free Construction  
Package Type  
__ = Axial Leaded  
SMS = Surface Mount Square Tab  
Voltage/Family  
6626 = 200V  
6627 = 400V  
6628 = 600V  
6629 = 800V  
6630 = 900V  
For High Efficiency Applications  
6631 = 1000V  
6631A = 1100V  
6631B = 1200V  
Typical Weight: 0.75 g (Axial Leaded); 0.45 g (SMS)  
TX, TXV, and Space Level Screening Available2/  
QPL registered devices per MIL-PRF-19500/590 may be  
available, contact factory  
MAXIMUM RATINGS3/  
SYM  
VALUE  
UNIT  
1N6626  
1N6627  
1N6628  
1N6629  
1N6630  
1N6631  
1N6631A  
1N6631B  
200  
400  
600  
800  
900  
1000  
1100  
1200  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage and  
DC Blocking Voltage  
VDC  
Average Rectified Forward Current4/  
1N6626 - 6628  
1N6629 - 6631  
2.3  
1.8  
IO1  
A
A
(Average current with a half sine wave including reverse voltage  
amplitude equal to the magnitude of the full rated VRWM  
)
1N6626 - 6630  
1N6631  
75  
60  
Peak Surge Current  
IFSM  
(tp = 8.3 ms Pulse, Half Sine Wave, Superimposed on IO, TA = 25oC)  
Storage Temperature  
Tstg  
TJ  
-65 to +175  
+150  
oC  
oC  
Maximum Operating Temperature  
Junction to Lead, L = 0.375” (Axial Lead)  
Junction to End Tab (Surface Mount)  
RJL  
RJE  
22  
6.5  
Maximum Thermal Resistance  
oC/W  
NOTES:  
Square Tab  
Surface Mount  
(SMS)  
Axial Leaded (__)  
1/ For ordering information, price, operating curves, and availability- Contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ Unless otherwise specified, all electrical characteristics @ 25°C.  
4/ Derate linearly 1.33 percent/°C for TL > +75°C (Axial Leaded); Derate linearly 2.5  
percent/°C for TEC > +110°C (SMS).  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0179A  
DOC  

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