Datasheet > 1N6629TXV

1N6629TXV

更新时间： 2024-11-02 09:28:43

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	71K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.8A, 800V V(RRM), Silicon,

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1N6629TXV 数据手册

1N6626 – 1N6631

Solid State Devices, Inc.

Series

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

2.3 – 1.8 AMP

HYPER FAST RECOVERY

RECTIFIER

Designer’s Data Sheet

Part Number/Ordering Information^1/

1N __ __ __

200 - 1200 VOLTS

│

└

│

└

Screening

30 - 60 nsec

__ = Not screened

TX = TX Level

TXV = TXV Level

S = S Level

FEATURES:



Hyper Fast Recovery: 30 - 60 nsec maximum

PIV up to 1200 Volts

Low Reverse Leakage Current

Hermetically Sealed

Void Free Construction

Package Type

__ = Axial Leaded

SMS = Surface Mount Square Tab

Voltage/Family

6626 = 200V

6627 = 400V

6628 = 600V

6629 = 800V

6630 = 900V

For High Efficiency Applications

6631 = 1000V

6631A = 1100V

6631B = 1200V

Typical Weight: 0.75 g (Axial Leaded); 0.45 g (SMS)

TX, TXV, and Space Level Screening Available^2/

QPL registered devices per MIL-PRF-19500/590 may be

available, contact factory

MAXIMUM RATINGS^3/

SYM

VALUE

UNIT

1N6626

1N6627

1N6628

1N6629

1N6630

1N6631

1N6631A

1N6631B

200

400

600

800

900

1000

1100

1200

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage and

DC Blocking Voltage

V_DC

Average Rectified Forward Current^4/

1N6626 - 6628

1N6629 - 6631

2.3

1.8

I_O1

(Average current with a half sine wave including reverse voltage

amplitude equal to the magnitude of the full rated V_RWM

)

1N6626 - 6630

1N6631

Peak Surge Current

I_FSM

(t_p= 8.3 ms Pulse, Half Sine Wave, Superimposed on I_O, T_A= 25^oC)

Storage Temperature

T_stg

T_J

-65 to +175

+150

^oC

Maximum Operating Temperature

Junction to Lead, L = 0.375” (Axial Lead)

Junction to End Tab (Surface Mount)

R_JL

R_JE

6.5

Maximum Thermal Resistance

^oC/W

NOTES:

Square Tab

Surface Mount

(SMS)

Axial Leaded (__)

1/ For ordering information, price, operating curves, and availability- Contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @ 25°C.

4/ Derate linearly 1.33 percent/°C for T_L> +75°C (Axial Leaded); Derate linearly 2.5

percent/°C for T_EC> +110°C (SMS).

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0179A

DOC

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与1N6629TXV相关器件

型号	品牌	获取价格	描述	数据表
1N6629U	SENSITRON	获取价格	Ultrafast Recovery Rectifier
1N6629US	MICROSEMI	获取价格	ULTRA FAST RECTIFIERS
1N6629US	SENSITRON	获取价格	Ultrafast Recovery Rectifier
1N6629USS	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,
1N6629USV	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,
1N6629USX	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,
1N6629UV	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,
1N6629V	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,
1N6629X	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,
1N662A	NJSEMI	获取价格	GENERAL PURPOSE DIFFUSED SILICON PLANAR DIODES

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