Datasheet > 1N6630E3-TR

1N6630E3-TR

更新时间： 2024-11-01 20:51:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		超快恢复二极管快速恢复二极管
页数	文件大小	规格书
4页	348K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN

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技术参数
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1N6630E3-TR 技术参数

生命周期：	Active	包装说明：	O-LALF-W2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.63
其他特性：	METALLURGICALLY BONDED, HIGH RELIABILITY	应用：	ULTRA FAST RECOVERY
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	O-LALF-W2
最大非重复峰值正向电流：	75 A	元件数量：	1
相数：	1	端子数量：	2
最大输出电流：	3 A	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
最大反向恢复时间：	0.06 µs	表面贴装：	NO
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

1N6630E3-TR 数据手册

1N6626 thru 1N6631

VOIDLESS-HERMETICALLY-SEALED

ULTRA FAST RECOVERY GLASS

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/590 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in surface mount MELF package configurations by adding a “US”

suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also

offers numerous other rectifier products to meet higher and lower current ratings

with various recovery time speed requirements including standard, fast and ultrafast

device types in both through-hole and surface mount packages.

“E” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular JEDEC registered 1N6626 to 1N6631 series

Voidless hermetically sealed glass package

Extremely robust construction

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

Ultrafast recovery rectifier series 200 to 1000 V

•

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

•

High forward surge current capability

JAN, JANTX, and JANTXV available per MIL-PRF-

Low thermal resistance

19500/590

•

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “MSP” prefix, e.g.

MSP6626, MSP6629, etc.

Surface mount equivalents also available in a square end-

cap MELF configuration with “US” suffix (see separate

data sheet for 1N6626US thru 1N6631US)

•

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

Storage Temperature: -65^oC to +175^oC

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 75A (except

1N6631 which is 60A)

TERMINATIONS: Axial-leads are Tin/Lead

(Sn/Pb) over Copper except for JANS with solid

Silver (Ag) and no finish

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 750 mg

Note: Test pulse = 8.3ms, half-sine wave.

•

Average Rectified Forward Current (I_O) at T_L= +75^oC

(L=.375 inch from body):

1N6626 thru 1N6628

1N6629 thru 1N6630

1N6631

4.0A

3.0A

2.5A

See package dimensions on last page

(Derate linearly at 1.0%/^oC for T_L> +75^oC)

•

Average Rectified Forward Current (I_O) at T_A=25^oC:

1N6626 thru 1N6628

1N6629 thru 1N6631

2.0A

1.4A

(Derate linearly at 0.67%/ ^oC for T_A>+25^oC. This I_Orating

is typical for PC boards where thermal resistance from

mounting point to ambient is sufficiently controlled where

_J(max)is not exceeded.)

•

Thermal Resistance L= 0.375 inch (R_θ_JL): 22^oC/W

Capacitance at V_R= 10 V: 40 pF

Solder temperature: 260^oC for 10 s (maximum)

Microsemi

Page 1

11-01-2004 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与1N6630E3-TR相关器件

型号	品牌	获取价格	描述	数据表
1N6630HR	DIGITRON	获取价格	Rectifier Diode
1N6630S	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,
1N6630S	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.8A, 900V V(RRM), Silicon,
1N6630SMS	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.8A, 900V V(RRM), Silicon,
1N6630SMSTXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.8A, 900V V(RRM), Silicon,
1N6630U	SENSITRON	获取价格	Ultrafast Recovery Rectifier
1N6630UE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 3A, Silicon, MELF-2
1N6630US	MICROSEMI	获取价格	ULTRA FAST RECTIFIERS
1N6630US	SENSITRON	获取价格	Ultrafast Recovery Rectifier
1N6630USS	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.4A, Silicon,

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