1N6470US

更新时间： 2024-11-26 21:55:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		瞬态抑制器二极管局域网
页数	文件大小	规格书
3页	312K
描述
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS

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技术参数
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1N6470US 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	MELF
包装说明：	R-LELF-R2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.4
Is Samacsys：	N	最小击穿电压：	6.5 V
击穿电压标称值：	6.5 V	外壳连接：	ISOLATED
最大钳位电压：	11 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-LELF-R2	JESD-609代码：	e0
最大非重复峰值反向功率耗散：	1500 W	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	RECTANGULAR	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	3 W	认证状态：	Not Qualified
最大重复峰值反向电压：	6 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

1N6470US 数据手册

1N6469US thru 1N6476US

Voidless-Hermetically-Sealed Surface

Mount Unidirectional Transient

Suppressors

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This surface mount series of industry recognized voidless-hermetically-sealed

Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-

PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be

tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6

Volts with 1500 W ratings. They are very robust in hard-glass construction and also

use an internal metallurgical bond identified as Category I for high reliability

applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These

devices are also available in axial-leaded packages for thru-hole mounting by deleting

the “US” suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also

offers numerous other TVS products to meet higher and lower peak pulse power and

voltage ratings in both through-hole and surface-mount packages.

Package “G”

(or “D-5C”)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

High surge current and peak pulse power provides

•

Military and other high reliability transient protection

Extremely robust construction

transient voltage protection for sensitive circuits

•

Triple-layer passivation

Internal “Category I” metallurgical bonds

Voidless hermetically sealed glass package

JAN/TX/TXV military qualifications available per MIL-

PRF-19500/552 by adding JAN, JANTX, or JANTXV

prefix

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “MSP” prefix, e.g.

MSP6469, MSP6476, etc.

Working Peak “Standoff” Voltage (V_WM) from 5.0 to

51.6 V

•

Available as 1500 W Peak Pulse Power (P_PP)

ESD and EFT protection per IEC61000-4-2 and

IEC61000-4-4 respectively

•

Secondary lightning protection per select levels in

IEC61000-4-5

Square-end-cap terminals for easy mounting

•

Nonsensitive to ESD per MIL-STD-750 Method

Axial-leaded equivalents are also available (see

1020

separate data sheet for 1N6469 thru 1N6476)

•

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & Storage Temperature: -55^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

Peak Pulse Power at 25^oC: 1500 Watts @ 10/1000 µs

(also see Figures 1,2 and 4)

Impulse repetition rate (duty factor): 0.01%

with Tungsten slugs

TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)

over copper

MARKING: Body painted and part number, etc.

POLARITY: Cathode band

Tape & Reel option: Standard per EIA-481-B

Weight: 1100 mg

See package dimensions on last page

•

Forward Surge Current: 130 Amps@ 8.33 ms one-

half sine wave

•

Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at

100 Amps (pulsed)

Steady-State Power: 3.0 W @ T_A= 25^oC (see note

below and Figure 4)

•

Thermal Resistance Junction to End Cap: 20.0 ^oC/W

Solder Temperatures: 260^oC for 10 s (maximum)

NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from

mounting point to ambient is sufficiently controlled where T_J(MAX)is not exceeded.

11-01-2004 REV A

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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1N6470US 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV1N6470US	MICROSEMI	完全替代	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, GLAS
JANTX1N6470US	MICROSEMI	类似代替	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, GLAS

与1N6470US相关器件

型号	品牌	获取价格	描述	数据表
1N6471	MICROSEMI	获取价格	TRANSIENT SUPPRESSORS
1N6471	SEMTECH	获取价格	QPL 1500 Watt Axial Leaded TVS
1N6471	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon
1N6471	NJSEMI	获取价格
1N647-1	MICROSEMI	获取价格	Silicon Switching Diode DO-35 Glass Package
1N6471E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon,
1N6471HR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon,
1N6471HRS	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon,
1N6471HRX	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon,
1N647-1R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.4A, Silicon, GLASS PACKAGE-2

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