生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.72 | 其他特性: | TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE, HIGH RELIABILITY |
最小击穿电压: | 13.6 V | 外壳连接: | ISOLATED |
最大钳位电压: | 22.6 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-LALF-W2 | 最大非重复峰值反向功率耗散: | 1500 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -55 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 3 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 12 V | 最大反向电流: | 1000 µA |
表面贴装: | NO | 技术: | AVALANCHE |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6471HRS | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, |
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1N6471HRX | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, |
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1N647-1R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.4A, Silicon, GLASS PACKAGE-2 |
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1N6471US | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, MELF-2 |
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1N6471US | MICROSEMI |
获取价格 |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
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1N6471US | SEMTECH |
获取价格 |
QPL 1500 Watt Surface Mount TVS |
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1N647-1X | MICROSEMI |
获取价格 |
暂无描述 |
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1N6472 | MICROSEMI |
获取价格 |
TRANSIENT SUPPRESSORS |
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1N6472 | SEMTECH |
获取价格 |
QPL 1500 Watt Axial Leaded TVS |
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1N6472.TR | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon |
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