Datasheet > 1N6473E3

1N6473E3

更新时间： 2024-11-24 14:46:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	345K
描述
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,

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技术参数
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1N6473E3 技术参数

生命周期：	Active	包装说明：	O-LALF-W2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.74
其他特性：	TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE	最小击穿电压：	27 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-LALF-W2	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-55 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	3 W	表面贴装：	NO
技术：	AVALANCHE	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

1N6473E3 数据手册

1N6469 thru 1N6476

Voidless-Hermetically-Sealed Unidirectional

Transient Suppressors

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This series of industry recognized voidless-hermetically-sealed Unidirectional

Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-

19500/552 and are ideal for high-reliability applications where a failure cannot be

tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6

Volts with 1500 W ratings. They are very robust in hard-glass construction and also

use an internal metallurgical bond identified as Category I for high reliability

applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These

devices are also available in a surface mount MELF package configuration by adding

a “US” suffix (see separate data sheet for 1N6469US thru 1N6476AUS). Microsemi

also offers numerous other TVS products to meet higher and lower peak pulse power

and voltage ratings in both through-hole and surface-mount packages.

“G” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

High surge current and peak pulse power provides

•

Military and other high reliability transient protection

Extremely robust construction

transient voltage protection for sensitive circuits

•

Triple-layer passivation

Internal “Category I” metallurgical bonds

Voidless hermetically sealed glass package

JAN/TX/TXV military qualifications available per MIL-

PRF-19500/552 by adding JAN, JANTX, or JANTXV

prefix

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “MSP” prefix, e.g.

MSP6469, MSP6476, etc.

Working Peak “Standoff” Voltage (V_WM) from 5.0 to

51.6 V

•

Available as 1500 W Peak Pulse Power (P_PP)

ESD and EFT protection per IEC61000-4-2 and

IEC61000-4-4 respectively

•

Secondary lightning protection per select levels in

IEC61000-4-5

Flexible axial-leaded mounting terminals

•

Nonsensitive to ESD per MIL-STD-750 Method

Surface Mount equivalents are also available in a

square-end-cap MELF configuration with a “US” suffix

(see separate data sheet)

1020

•

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & Storage Temperature: -55^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

Peak Pulse Power at 25^oC: 1500 Watts @ 10/1000 µs

(also see Figures 1,2 and 4)

Impulse repetition rate (duty factor): 0.01%

with Tungsten slugs

TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)

over copper

MARKING: Body painted and part number, etc.

POLARITY: Cathode band

Tape & Reel option: Standard per EIA-296

Weight: 1270 mg

See package dimensions on last page

•

Forward Surge Current: 130 Amps@ 8.33 ms one-half

sine wave

•

Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at

100 Amps (pulsed)

Steady-State Power: 3.0 W @ T_A= 25^oC (see note

below and Figure 4)

•

Thermal Resistance @ 3/8 inch lead length: 50.0 ^oC/W

Solder Temperatures: 260^oC for 10 s (maximum)

NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from

mounting point to ambient is sufficiently controlled where T_J(MAX)is not exceeded.

11-01-2004 REV A

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与1N6473E3相关器件

型号	品牌	获取价格	描述	数据表
1N6473HR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,
1N6473HRS	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,
1N6473HRV	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,
1N6473HRX	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,
1N6473US	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, MELF-2
1N6473US	MICROSEMI	获取价格	VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS
1N6473US	SEMTECH	获取价格	QPL 1500 Watt Surface Mount TVS
1N6474	MICROSEMI	获取价格	TRANSIENT SUPPRESSORS
1N6474	SEMTECH	获取价格	QPL 1500 Watt Axial Leaded TVS
1N6474E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,

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