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1N6475HRV PDF预览

1N6475HRV

更新时间: 2024-11-24 13:01:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管
页数 文件大小 规格书
2页 67K
描述
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,

1N6475HRV 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.61
其他特性:TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE, HIGH RELIABILITY最小击穿电压:43.7 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-LALF-W2JESD-609代码:e0
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:3 W认证状态:Not Qualified
表面贴装:NO技术:AVALANCHE
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N6475HRV 数据手册

 浏览型号1N6475HRV的Datasheet PDF文件第2页 

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