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1N6476US

更新时间： 2024-11-27 07:23:07
品牌 Logo 应用领域
商升特 - SEMTECH 瞬态抑制器二极管电视局域网
页数 文件大小 规格书
3页 127K
描述
QPL 1500 Watt Surface Mount TVS

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中文翻译

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1N6476US 技术参数

生命周期：Active包装说明：O-LELF-N2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：17 weeks风险等级：5.4
Is Samacsys：N配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-LELF-N2元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
极性：UNIDIRECTIONAL认证状态：Not Qualified
表面贴装：YES技术：AVALANCHE
端子形式：NO LEAD端子位置：END
Base Number Matches：1

1N6476US 数据手册

 浏览型号1N6476US的Datasheet PDF文件第2页浏览型号1N6476US的Datasheet PDF文件第3页 
1N6469US THRU 1N6476US  
QPL 1500 Watt Surface Mount TVS  
POWER DISCRETES  
Features  
Description  
The 1N64xx series of transient voltage suppressors are  
designed to protect military and commercial electronic  
equipment from overvoltages caused by lightning, ESD,  
EFT, inductive load switching, and EMP. These devices  
are constructed using a p-n junction TVS diode in a  
hermetically sealed, voidless glass package. The  
hermetically sealed package provides high reliability in  
harsh environmental conditions. TVS diodes are further  
characterized by their high surge capability, low operating  
and clamping voltages, and a theoretically instantaneous  
response time. This makes them ideal for use as board  
level protection for sensitive semiconductor components.  
These devices are DSCC QPL qualified to MIL-PRF-  
19500/552.  
‹ 1500 Watts peak pulse power (tp = 10/1000µs)  
‹ Voidless hermetically sealed glass package  
‹ Metallurgically bonded  
‹ High surge capacity  
‹ Unidirectional  
‹ Available in JAN, JTX, and JTXV versions per  
MIL-PRF-19500/552  
Applications  
‹ Aerospace and industrial electronics  
‹ Board level protection  
‹ Airborne systems  
‹ Shipboard systems  
‹ Ground systems  
Mechanical Characteristics  
‹ Hermetically sealed glass package  
Absolute Maximum Ratings  
Rating  
Symbol  
Value  
Units  
Peak Pulse Power (tp = 10 x 1000µs)  
Operating Temperature Range  
Ppk  
Tj  
1500  
-65 to +175  
-65 to +175  
5
Watts  
°C  
Storage Temperature Range  
TSTG  
PD  
°C  
Steady-State Power Dissipation @ TL = 75°C (3/8")  
Watts  
Electrical Characteristics  
Electrical specifications @ TA = 25°C unless otherwise specified.  
Device  
Type  
Reverse  
Standoff  
Voltage  
VRWM  
Reverse  
Leakage  
Current  
IR  
Minimum  
Test  
Maximum Peak Pulse Peak Pulse  
Temp.  
Breakdown Current Clamping  
Current  
I
Current  
I
Coef.  
of V  
Voltage  
VBR @ IT  
Voltage  
VC @ IPP  
IT  
TP =P1PmS  
TP =P2P0µS  
αVZBR  
V
5
6
µA  
V
mA  
50  
50  
V
9
A
A
%/ °C  
0.040  
0.040  
1N6469  
1N6470  
1500  
1000  
5.6  
6.5  
167  
137  
945  
775  
11.0  
1N6471  
12  
20  
13.6  
10  
22.6  
66  
374  
0.050  
1N6472  
1N6473  
1N6474  
1N6475  
1N6476  
15  
24  
10  
5
16.4  
27.0  
33.0  
43.7  
54.0  
10  
5
26.5  
41.4  
47.5  
63.5  
78.5  
57  
36.5  
32  
322  
206  
190  
136  
106  
0.060  
0.084  
0.093  
0.094  
0.096  
30.5  
40.3  
51.6  
5
1
5
1
24  
5
1
19  
Revision: September 24, 2008  
1
www.semtech.com  
123

中文翻译

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1N6476US 替代型号

型号 品牌 替代类型 描述 数据表
JAN1N6476US SEMTECH

完全替代

 Trans Voltage Suppressor Diode, 1500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon, H
JANTX1N6476US SEMTECH

类似代替

 Trans Voltage Suppressor Diode, 1500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon, H

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1N6479 VISHAY

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