Datasheet > 1N6474E3

1N6474E3

更新时间： 2024-11-27 14:46:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	345K
描述
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N6474E3 技术参数

生命周期：	Active	包装说明：	O-LALF-W2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.72
其他特性：	TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE	最小击穿电压：	33 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-LALF-W2	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-55 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	3 W	表面贴装：	NO
技术：	AVALANCHE	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

1N6474E3 数据手册

1N6469 thru 1N6476

Voidless-Hermetically-Sealed Unidirectional

Transient Suppressors

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This series of industry recognized voidless-hermetically-sealed Unidirectional

Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-

19500/552 and are ideal for high-reliability applications where a failure cannot be

tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6

Volts with 1500 W ratings. They are very robust in hard-glass construction and also

use an internal metallurgical bond identified as Category I for high reliability

applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These

devices are also available in a surface mount MELF package configuration by adding

a “US” suffix (see separate data sheet for 1N6469US thru 1N6476AUS). Microsemi

also offers numerous other TVS products to meet higher and lower peak pulse power

and voltage ratings in both through-hole and surface-mount packages.

“G” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

High surge current and peak pulse power provides

•

Military and other high reliability transient protection

Extremely robust construction

transient voltage protection for sensitive circuits

•

Triple-layer passivation

Internal “Category I” metallurgical bonds

Voidless hermetically sealed glass package

JAN/TX/TXV military qualifications available per MIL-

PRF-19500/552 by adding JAN, JANTX, or JANTXV

prefix

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “MSP” prefix, e.g.

MSP6469, MSP6476, etc.

Working Peak “Standoff” Voltage (V_WM) from 5.0 to

51.6 V

•

Available as 1500 W Peak Pulse Power (P_PP)

ESD and EFT protection per IEC61000-4-2 and

IEC61000-4-4 respectively

•

Secondary lightning protection per select levels in

IEC61000-4-5

Flexible axial-leaded mounting terminals

•

Nonsensitive to ESD per MIL-STD-750 Method

Surface Mount equivalents are also available in a

square-end-cap MELF configuration with a “US” suffix

(see separate data sheet)

1020

•

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & Storage Temperature: -55^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

Peak Pulse Power at 25^oC: 1500 Watts @ 10/1000 µs

(also see Figures 1,2 and 4)

Impulse repetition rate (duty factor): 0.01%

with Tungsten slugs

TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)

over copper

MARKING: Body painted and part number, etc.

POLARITY: Cathode band

Tape & Reel option: Standard per EIA-296

Weight: 1270 mg

See package dimensions on last page

•

Forward Surge Current: 130 Amps@ 8.33 ms one-half

sine wave

•

Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at

100 Amps (pulsed)

Steady-State Power: 3.0 W @ T_A= 25^oC (see note

below and Figure 4)

•

Thermal Resistance @ 3/8 inch lead length: 50.0 ^oC/W

Solder Temperatures: 260^oC for 10 s (maximum)

NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from

mounting point to ambient is sufficiently controlled where T_J(MAX)is not exceeded.

11-01-2004 REV A

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1N6474E3相关器件

型号	品牌	获取价格	描述	数据表
1N6474HR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,
1N6474HRS	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,
1N6474HRV	MICROSEMI	获取价格	暂无描述
1N6474HRX	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,
1N6474US	MICROSEMI	获取价格	VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS
1N6474US	SEMTECH	获取价格	QPL 1500 Watt Surface Mount TVS
1N6474US	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, MELF-2
1N6475	SEMTECH	获取价格	QPL 1500 Watt Axial Leaded TVS
1N6475	MICROSEMI	获取价格	HIGH SUGRE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS.
1N6475	NJSEMI	获取价格	Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin Case G

与1N6474E3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6474E3

1N6474E3 技术参数

1N6474E3 数据手册

与1N6474E3相关器件

与1N6474E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6474E3

1N6474E3 技术参数

1N6474E3 数据手册

与1N6474E3相关器件

与1N6474E3相关文章

您还可以找

您在本页遇到什么问题？