Datasheet > JANTX1N6470US

JANTX1N6470US

更新时间： 2024-11-27 15:35:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	162K
描述
Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, GLASS PACKAGE-2

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JANTX1N6470US 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	MELF
包装说明：	O-LELF-R2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.46
最小击穿电压：	6.5 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e0	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	3 W
认证状态：	Qualified	参考标准：	MIL-19500/552C
最大重复峰值反向电压：	6 V	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WRAP AROUND	端子位置：	END
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

JANTX1N6470US 数据手册

1N6469US thru 1N6476US

Voidless-Hermetically-Sealed Surface

Mount Unidirectional Transient

Suppressors

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This surface mount series of industry recognized voidless-hermetically-sealed

Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-

PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be

tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6

Volts with 1500 W ratings. They are very robust in hard-glass construction and also

use an internal metallurgical bond identified as Category I for high reliability

applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These

devices are also available in axial-leaded packages for thru-hole mounting by deleting

the “US” suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also

offers numerous other TVS products to meet higher and lower peak pulse power and

voltage ratings in both through-hole and surface-mount packages.

Package “G”

(or “D-5C”)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

High surge current and peak pulse power provides

transient voltage protection for sensitive circuits

•

Military and other high reliability transient protection

Extremely robust construction

•

Triple-layer passivation

Working Peak “Standoff” Voltage (V_WM) from 5.0 to

51.6 V

Internal “Category I” metallurgical bonds

Voidless hermetically sealed glass package

•

Available as 1500 W Peak Pulse Power (P_PP)

JAN/TX/TXV military qualifications available per MIL-

PRF-19500/552 by adding JAN, JANTX, or JANTXV

prefix

ESD and EFT protection per IEC61000-4-2 and

IEC61000-4-4 respectively

•

Secondary lightning protection per select levels in

IEC61000-4-5

•

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “SP” prefix, e.g.

SP6469, SP6476, etc.

•

Square-end-cap terminals for easy mounting

Nonsensitive to ESD per MIL-STD-750 Method

1020

Axial-leaded equivalents are also available (see

separate data sheet for 1N6469 thru 1N6476)

•

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & Storage Temperature: -55^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Pulse Power at 25^oC: 1500 Watts @ 10/1000 µs

(also see Figures 1,2 and 4)

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver end caps with Tin/Lead (Sn/Pb)

finish.

•

Impulse repetition rate (duty factor): 0.01%

Forward Surge Current: 130 Amps@ 8.33 ms one-

half sine wave

•

MARKING: Body painted and part number, etc.

POLARITY: Cathode band

•

Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at

100 Amps (pulsed)

Steady-State Power: 3.0 W @ T_A= 25^oC (see note

below and Figure 4)

Tape & Reel option: Standard per EIA-481-B

Weight: 1100 mg

•

Thermal Resistance Junction to End Cap: 20.0 ^oC/W

Solder Temperatures: 260^oC for 10 s (maximum)

See package dimensions on last page

NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from

mounting point to ambient is sufficiently controlled where T_J(MAX)is not exceeded.

10-03-2007 REV D

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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JANTX1N6470US 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV1N6470US	MICROSEMI	类似代替	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, GLAS
1N6470US	MICROSEMI	类似代替	VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS

与JANTX1N6470US相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N6471	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTX1N647-1	MICROSEMI	获取价格	High surge current and peak pulse power provides transient voltage protection for sensitiv
JANTX1N6472	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTX1N6472US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTX1N6473	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTX1N6473	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon,
JANTX1N6473US	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, GLA
JANTX1N6474	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 31V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTX1N6474US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, H
JANTX1N6474US	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, G

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