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JANTX1N647-1 PDF预览

JANTX1N647-1

更新时间： 2024-02-21 10:29:17
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管脉冲
页数 文件大小 规格书
3页 185K
描述
High surge current and peak pulse power provides transient voltage protection for sensitive circuits

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中文翻译

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JANTX1N647-1 技术参数

生命周期：Obsolete包装说明：SIMILAR TO DO-35, 2 PIN
Reach Compliance Code：unknown风险等级：5.71
Is Samacsys：N外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-XALF-W2
元件数量：1端子数量：2
最大输出电流：0.15 A封装主体材料：UNSPECIFIED
封装形状：ROUND封装形式：LONG FORM
认证状态：Not Qualified参考标准：MIL-19500/240
最大重复峰值反向电压：400 V表面贴装：NO
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

JANTX1N647-1 数据手册

 浏览型号JANTX1N647-1的Datasheet PDF文件第2页浏览型号JANTX1N647-1的Datasheet PDF文件第3页 
1N6469US thru 1N6476US  
Voidless-Hermetically-Sealed Surface  
Mount Unidirectional Transient  
Suppressors  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This surface mount series of industry recognized voidless-hermetically-sealed  
Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-  
PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be  
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6  
Volts with 1500 W ratings. They are very robust in hard-glass construction and also  
use an internal metallurgical bond identified as Category I for high reliability  
applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These  
devices are also available in axial-leaded packages for thru-hole mounting by deleting  
the “US” suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also  
offers numerous other TVS products to meet higher and lower peak pulse power and  
voltage ratings in both through-hole and surface-mount packages.  
Package “G”  
(or “D-5C”)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
High surge current and peak pulse power provides  
transient voltage protection for sensitive circuits  
•
•
•
Military and other high reliability transient protection  
Extremely robust construction  
•
•
•
•
Triple-layer passivation  
Working Peak “Standoff” Voltage (VWM) from 5.0 to  
51.6 V  
Internal “Category I” metallurgical bonds  
Voidless hermetically sealed glass package  
•
•
Available as 1500 W Peak Pulse Power (PPP)  
JAN/TX/TXV military qualifications available per MIL-  
PRF-19500/552 by adding JAN, JANTX, or JANTXV  
prefix  
ESD and EFT protection per IEC61000-4-2 and  
IEC61000-4-4 respectively  
•
Secondary lightning protection per select levels in  
IEC61000-4-5  
•
•
Further options for screening in accordance with MIL-  
PRF-19500 for JANS by using a “SP” prefix, e.g.  
SP6469, SP6476, etc.  
•
•
Square-end-cap terminals for easy mounting  
Nonsensitive to ESD per MIL-STD-750 Method  
1020  
Axial-leaded equivalents are also available (see  
separate data sheet for 1N6469 thru 1N6476)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Operating & Storage Temperature: -55oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
Peak Pulse Power at 25oC: 1500 Watts @ 10/1000 µs  
(also see Figures 1,2 and 4)  
TERMINATIONS: End caps are Copper with  
Tin/Lead (Sn/Pb) finish. Note: Previous inventory  
had solid Silver end caps with Tin/Lead (Sn/Pb)  
finish.  
•
•
Impulse repetition rate (duty factor): 0.01%  
Forward Surge Current: 130 Amps@ 8.33 ms one-  
half sine wave  
•
•
•
•
•
MARKING: Body painted and part number, etc.  
POLARITY: Cathode band  
•
•
Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at  
100 Amps (pulsed)  
Steady-State Power: 3.0 W @ TA = 25oC (see note  
below and Figure 4)  
Tape & Reel option: Standard per EIA-481-B  
Weight: 1100 mg  
•
•
Thermal Resistance Junction to End Cap: 20.0 oC/W  
Solder Temperatures: 260oC for 10 s (maximum)  
See package dimensions on last page  
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from  
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.  
Copyright © 2007  
10-03-2007 REV D  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

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JANTX1N647-1 替代型号

型号 品牌 替代类型 描述 数据表
JAN1N647-1 MICROSEMI

完全替代

 Silicon Rectifier Diodes
1N647-1 MICROSEMI

完全替代

 Silicon Switching Diode DO-35 Glass Package
JANTXV1N647-1 MICROSEMI

类似代替

 Rectifier Diode, 1 Element, 0.15A, 12V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN

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JANTX1N6473US MICROSEMI

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JANTX1N6474US MICROSEMI

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JANTX1N6475 SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 40V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTX1N6475 MICROSEMI

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