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1N5821-TP PDF预览

1N5821-TP

更新时间: 2024-09-16 12:33:39
品牌 Logo 应用领域
美微科 - MCC 整流二极管PC
页数 文件大小 规格书
4页 489K
描述
3 Amp Schottky Barrier Rectifier 20 - 40 Volts

1N5821-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:0.83
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:725879Samacsys Pin Count:2
Samacsys Part Category:Schottky DiodeSamacsys Package Category:Diodes, Axial Diameter Horizontal Mounting
Samacsys Footprint Name:1N5821-TPSamacsys Released Date:2018-11-08 12:32:38
Is Samacsys:N其他特性:LOW NOISE
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.5 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:80 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5821-TP 数据手册

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M C C  
1N5820  
THRU  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
1N5822  
Features  
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
3 Amp Schottky  
Barrier Rectifier  
20 - 40 Volts  
·
·
·
·
Low Forward Voltage Drop and High Current Capability  
High Surge Current Capability  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +125°C  
Maximum Thermal Resistance; 28°C/W Junction To Ambient  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
20V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N5820  
1N5821  
1N5822  
14V  
21V  
28V  
20V  
30V  
40V  
1N5820  
1N5821  
1N5822  
30V  
40V  
A
Cathode  
Mark  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
3.0A  
TA = 85°C  
Peak Forward Surge  
Current  
IFSM  
80A  
8.3ms, half sine  
C
Maximum  
Instantaneous  
Forward Voltage  
1N5820  
1N5821  
1N5822  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
.475V  
.500V  
.525V  
IFM = 3.0A;  
TJ = 25°C(Note 2)  
DIMENSIONS  
INCHES  
MIN  
.287  
.189  
.048  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.374  
.208  
.052  
---  
MAX  
9.50  
5.30  
1.30  
---  
NOTE  
7.30  
4.80  
IR  
0.5mA  
20mA  
TJ = 25°C  
TJ = 100°C  
1.20  
25.40  
1.000  
Typical Junction  
Capacitance  
CJ  
200pF  
Measured at  
1.0MHz, VR=4.0V  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
2.Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  
Revision: B  
2013/01/01  
1 of 4  

1N5821-TP 替代型号

型号 品牌 替代类型 描述 数据表
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